Ordering number:EN2965B
NPN Triple Diffused Planar Silicon Transistor
2SC3894
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed (t=100ns typ). f
· High breakdown voltage (V =1500V).
CBO
·High reliability (Adoption of HVP process).
·Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2039D
[2SC3894]
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
1500 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
800 |
V |
Emitter-to-Base Voltage |
VEBO |
|
6 |
V |
Collector Current |
IC |
|
6 |
A |
Collector Current (Pulse) |
ICP |
|
16 |
A |
Collector Dissipation |
PC |
|
3.0 |
W |
|
|
Tc=25˚C |
60 |
W |
|
|
|
|
|
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
|
Conditions |
|
Ratings |
|
Unit |
|
|
|
|
||||
|
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=800V, IE=0 |
|
|
|
10 |
µA |
|
ICES |
VCE=1500V, RBE=0 |
|
|
|
1.0 |
mA |
Collector-to-Emitter Sastain Voltage |
VCEO(sus) |
IC=100mA, IB=0 |
|
800 |
|
|
V |
Emitter Cutoff Current |
IEBO |
VEB=4V, IC=0 |
|
|
|
1.0 |
mA |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=4A, IB=1A |
|
|
|
5 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=4A, IB=1A |
|
|
|
1.5 |
V |
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3098HA (KT)/62695TS (KOTO)/N291MH/9149MO, TS No.2965–1/4
2SC3894
Parameter |
Symbol |
Conditions |
|
|
Ratings |
|
Unit |
|
|
|
|
||||
|
|
|
min |
|
typ |
max |
|
|
|
|
|
|
|
|
|
DC Current Gain |
hFE1 |
VCE=5V, IC=1.0A |
|
8 |
|
|
|
hFE2 |
VCE=5V, IC=4A |
|
4 |
|
8 |
|
|
|
|
|
|
||||
Storage Time |
tstg |
IC=4A, IB1=0.8A, IB2=–1.6A |
|
|
|
3.0 |
µs |
Fall Time |
tf |
IC=4A, IB1=0.8A, IB2=–1.6A |
|
|
0.1 |
0.2 |
µs |
Switching Time Test Circuit
No.2965–2/4
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