SANYO 2SC3894 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:EN2965B
2SC3894
Features
· High speed (tf=100ns typ).
· High breakdown voltage (V
CBO
=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2039D
[2SC3894]
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
OBC OEC OBE
Tc=25˚C
0051V 008V 6V 6A 61A
0.3W 06W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
egatloVniatsaSrettimE-ot-rotcelloCV
tnerruCffotuCrettimEI
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
I I
V
OBC
V
SEC
I
)sus(OEC
C
V
OBE
I
)tas(EC
C
I
)tas(EB
C
I,V008=
BC EC
BE
0=01Aµ
E
R,V0051=
0=0.1Am
EB
I,Am001=
0=008V
B
I,V4=
0=0.1Am
C
I,A4=
A1=
B
I,A4=
A1=5.1V
B
N3098HA (KT)/62695TS (KOTO)/N291MH/9149MO, TS No.2965–1/4
nimpytxam
sgnitaR
tinU
5V
2SC3894
retemaraPlobmySsnoitidnoC
niaGtnerruCCD
emiTegarotSt
emiTllaFt
hEF1VECI,V5= hEF2VECI,V5=
I
gts
C
I
f
C
A0.1=
C
A4=
C
I,A4= I,A4=
I,A8.0=
1B 1B
2B
I,A8.0=
2B
Switching Time Test Circuit
sgnitaR
nimpytxam
8
48 A6.1–= A6.1–=
1.02.0sµ
tinU
0.3sµ
No.2965–2/4
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