SANYO 2SC3808 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Transistor

High hFE, Low-Frequency

General-Purpose Amplifier Applications

Ordering number:EN2105A

2SC3808

Applications

· Low frequency general-purpose amplifiers, drivers.

Features

· Large current capacity (IC=2A).

· Adoption of MBIT process.

· High DC current gain (hFE=800 to 3200).

· Low collector-to-emitter saturation voltage
(V

· High V

Specifications

Absolute Maximum Ratings at Ta = 25˚C

≤0.5V).

CE(sat)

(V

EBO

tnerruCrotcelloCI

≥15V).

EBO

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

C

Tc=25˚C

Package Dimensions

unit:mm

2043A

[2SC3808]

B : Base
C : Collector
E : Emitter
SANYO : TO-126LP

08V
06V
51V
2A
4A

2.1W
51W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

hEF1VECI,V5=
hEF2VECI,V5=

V

OBC

V

OBE

V

T

V

bo

I,V05=

BC
BE

EC
BC

0=1Aµ

E

I,V01=

0=1Aµ

C

Am005=

C

A1=

C

I,V01=

Am05=

C

zHM1=f,V01=

N3098HA (KT)/3257AT, TS No.2015–1/4

nimpytxam

00800510023
006

sgnitaR

071zHM
42Fp

tinU

2SC3808

retemaraPlobmySsnoitidnoC

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

emiTNO-nruTt

emiTegarotSt

emiTllaFt

I

I,A1=

)tas(EC

C

I

)tas(EB

C

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E
no
gts

f

Am02=

B

I,A1=

Am02=78.02.1V

B

I,Aµ01=

0=08V

E

R,Am1=

=∞ 06V

EB

I,Aµ01=

0=51V

C

.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS

Switching Time Test Circuit

sgnitaR

nimpytxam

2.05.0V

32.0sµ

7.2sµ

57.0sµ

tinU

No.2015–2/4