Sanyo 2SC3807 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Ordering number:EN2018A
2SC3807
Applications
· Low frequency general-purpose amplifiers, drivers.
Features
· Large current capacity (IC=2A).
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage
(V
· High V
Specifications
Absolute Maximum Ratings at Ta = 25˚C
≤0.5V).
CE(sat)
(V
EBO
tnerruCrotcelloCI
≥15V).
EBO
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Tc=25˚C
Package Dimensions
unit:mm
2043A
[2SC3807]
B : Base
C : Collector
E : Emitter
SANYO : TO-126LP
03V
52V
51V
2A
4A
2.1W
51W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
hEF1VECI,V5=
hEF2VECI,V5=
V
OBC
V
OBE
V
T
V
bo
I,V02=
BC
BE
EC
BC
0=1.0Aµ
E
I,V01=
0=1.0Aµ
C
Am005=
C
A1=
C
I,V01=
Am05=
C
zHM1=f,V01=
N3098HA (KT)/5257KI/D016AT, TS No.2018–1/4
nimpytxam
00800510023
006
sgnitaR
062zHM
72Fp
tinU
2SC3807
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
I,A1=
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
Am02=
B
I,A1=
Am02=58.02.1V
B
I,Aµ01=
0=03V
E
R,Am1=
=∞ 52V
EB
I,Aµ01=
0=51V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time Test Circuit
sgnitaR
nimpytxam
51.05.0V
41.0sµ
53.1sµ
1.0sµ
tinU
No.2018–2/4
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