Sanyo 2SC3789 Specifications

Ordering number:EN2093

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1479/2SC3789

High-Definiton CRT Display

Video Output Applications

Applications

· High-definition CRT display.

· Color TV chroma output, high breakdown voltage
drivers.

Features

· High breakdown voltage (V

· Excellent high frequency characteristic

: Cre=1.8pF (typ).

· Adoption of MBIT process.

· No insulator required for mounting, which contrib­utes to reducing the cost and the number of manufac­turing processes.

· Plastic-covered heat sink facilitating high-density
mounting.

· Directly interchange able with TO-126 because the
package is designed based on the conventional
package dimensions.

( ) : 2SA1479

CEO

≥300V).

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

tnerruCrotcelloCkaePI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

C

Tc=25˚C

Package Dimensions

unit:mm

2042A

[2SA1479/2SC3789]

B : Base
C : Collector
E : Emitter

SANYO : TO-126ML

003)–(V

003)–(V

5)–(V

001)–(Am

002)–(Am

5.1W
7W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCDh

tcudorPhtdiwdnaB-niaGf

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatoVnwodkaerBesaB-ot-rettimEV

ecnaticapaCtuptuOC

ecnaticapaCrefsnarTesreveRC

V

OBC
OBE

EF

T

bo

er

BC

V

BE

V

EC

V

EC

I

)tas(EC

C

I

)tas(EB

C

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

V

BC

V

BC

I,V002)–(=

0=1.0)–(Aµ

E

I,V4)–(=

0=1.0)–(Aµ

C

I,V01)–(=

C

I,V03)–(=

C

I,Am02)–(=

B

I,Am02)–(=

B

I,Aµ01)–(=

E

R,Am1)–(=

I,Aµ01)–(=

C

Am01)–(=*04*023

Am01)–(=07zHM
Am2)–(=6.0)–(V
Am2)–(=0.1)–(V

0=003)–(V

=∞ 003)–(V

EB

0=5)–(V

zHM1=f,V03)–(=

zHM1=f,V03)–(=

nimpytxam

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/4087TA, TS No.2093-1/4

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6.2Fp
)1.3(Fp

8.1Fp
)3.2(Fp

tinU

2SA1479/2SC3789

* : The 2SA1479/2SC3789 are classified by 10mA hFE as follows :

08C04021D06002E001023F061

No.2093-2/4

2SA1479/2SC3789

No.2093-3/4

2SA1479/2SC3789

No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.

Anyone purchasing any products described or contained herein for an above-mentioned use shall:

Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant­eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.

This catalog provides information as of July, 1998. Specifications and information herein are subject to
change without notice.

PS No.2093-4/4