Ordering number:EN2253A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1478/2SC3788
High-Definition CRT Display
Video Output Applications
Features
· High breakdown voltage : V ≥200V.
CEO
·Small reverse transfer capacitance and excellent high frequency cahaceteristic
:Cre=1.2pF (NPN), 1.7pF (PNP).
·Adoption of FBET process.
( ) : 2SA1478
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2042A
[2SA1478/2SC3788]
B : Base
C : Collector
E : Emitter
SANYO : TO-126ML
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)200 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)200 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)5 |
V |
Collector Current |
IC |
|
(–)100 |
mA |
Peak Collector Current |
ICP |
|
(–)200 |
mA |
Collector Dissipation |
PC |
|
1.3 |
W |
|
|
Tc=25˚C |
5 |
W |
|
|
|
|
|
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)150V, IE=0 |
|
|
(–)0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
|
|
(–)0.1 |
µA |
DC Current Gain |
hFE |
VCE=(–)10V, IC=(–)10mA |
40* |
|
320* |
|
Gain-Bandwidth Product |
fT |
VCE=(–)30V, IC=(–)10mA |
|
150 |
|
MHz |
Output Capacitance |
Cob |
VCB=(–)30V, f=1MHz |
|
1.7 |
|
pF |
|
|
|
|
(2.6) |
|
pF |
|
|
|
|
|
|
|
Reverse Transfer Capacitance |
Cre |
VCB=(–)30V, f=1MHz |
|
1.2 |
|
pF |
|
|
|
|
(1.7) |
|
pF |
|
|
|
|
|
|
|
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)20mA, IB=(–)2mA |
|
|
(–)0.6 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)20mA, IB=(–)2mA |
|
|
(–)1.0 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)200 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)200 |
|
|
V |
Emitter-to-Base Breakdown Votage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)5 |
|
|
V |
* : The 2SA1478/2SC3788 are classified by 10mA hFE as follows:
40 C 80 60 D 120 100 E 200 160 F 320
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3247TA, TS No.2253-1/4
2SA1478/2SC3788
No.2253-2/4