SANYO 2SC3787, 2SA1477 Datasheet

0 (0)

Ordering number:EN2089B

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1477/2SC3787

160V/140mA Switching Applications

Applications

Package Dimensions

· Predrivers for 100W power amplifiers.

unit:mm

Features

2042B

[2SA1477/2SC3787]

· Adoption of FBET process.

 

· Excellent linearity of h .

 

FE

 

· Small C .

 

ob

 

· Plastic-convered heat sink facilitating high-density

 

mounting (TO-126ML package).

 

 

 

 

 

 

 

1 : Emitter

 

 

 

 

 

 

 

2 : Collector

 

( ) : 2SA1477

 

 

 

 

 

3 : Base

 

 

 

 

 

 

 

 

 

 

 

Specifications

 

 

 

 

 

SANYO : TO-126ML

Absolute Maximum Ratings at Ta = 25˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

 

Conditions

 

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

 

 

Collector-to-Base Voltage

VCBO

 

 

 

 

 

 

(–)180

V

Collector-to-Emitter Voltage

VCEO

 

 

 

 

 

 

(–)160

V

Emitter-to-Base Voltage

VEBO

 

 

 

 

 

 

(–)5

V

Collector Current

IC

 

 

 

 

 

 

(–)140

mA

Peak Collector Current

ICP

 

 

 

 

 

 

(–)200

mA

Collector Dissipation

PC

 

 

 

 

 

 

1.3

W

 

 

Tc=25˚C

 

 

 

 

10

W

 

 

 

 

 

 

 

 

 

 

Junction Temperature

Tj

 

 

 

 

 

 

150

˚C

 

 

 

 

 

 

 

 

 

Storage Temperature

Tstg

 

 

 

 

–55 to +150

˚C

 

 

 

 

 

 

 

 

 

 

Electrical Characteristics at Ta = 25˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

 

Conditions

 

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

 

 

min

typ

 

max

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

ICBO

VCB=(–)120V, IE=0

 

 

 

 

(–)100

nA

Emitter Cutoff Current

IEBO

VEB=(–)4V, IC=0

 

 

 

 

(–)100

nA

DC Current Gain

hFE

VCE=(–)5V, IC=(–)10mA

100

 

 

400

 

Gain-Bandwidth Product

fT

VCE=(–)10V, IC=(–)10mA

 

 

150

 

 

MHz

Output Capacitance

Cob

VCB=(–)10V, f=1MHz

 

 

(4.0)

 

 

pF

 

 

 

 

 

 

3.0

 

 

pF

 

 

 

 

 

 

 

 

 

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=(–)50mA, IB=(–)5mA

 

 

(–140)

 

(–400)

mV

 

 

 

 

 

 

70

 

300

mV

 

 

 

 

 

 

 

 

 

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=(–)50mA, IB=(–)5mA

 

 

 

 

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=(–)10µA, IE=0

(–)180

 

 

 

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=(–)1mA, RBE=

(–)160

 

 

 

V

Emitter-to-Base Breakdown Votage

V(BR)EBO

IE=(–)10µA, IC=0

(–)5

 

 

 

V

Rise Time

ton

See specified Test Circuit

 

 

0.1

 

 

µs

Storage Time

tstg

See specified Test Circuit

 

 

0.5

 

 

µs

Fall Time

tf

See specified Test Circuit

 

 

0.1

 

 

µs

*: The 2SA1477/2SC3787 are classified by 10mA hFE as follows :

100 R 200 140 S 280 200 T 400

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/10996TS (KOTO) 8-8491/5197TA, TS No.2089-1/4

SANYO 2SC3787, 2SA1477 Datasheet

2SA1477/2SC3787

Switching Time Test Circuit

(For PNP, the polarity is reversed)

Unit (resistance : Ω, capacitance : F)

No.2089-2/4

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