Ordering number:EN2528A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1476/2SC3782
Ultrahigh-Definition CRT Display
Video Output Applications
Applications
·Video output.
·Color TV chroma output.
·Wide-band amp.
Features
· HighTf (fT typ=400MHz).
· High breakdown voltage (V ≥200V).
CEO
·Small reverse transfer capacitance and excellent high
frequency characteristic : Cre=2.1pF (NPN), 2.6pF (PNP).
·Complementary PNP and NPN types.
·Adoption of FBET process.
( ) : 2SA1476
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2010C
[2SA1476/2SC3782]
JEDEC : TO-220AB E : Emitter
EIAJ : SC-46 |
C : Collector |
|
B : Base |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)200 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)200 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)4 |
V |
Collector Current |
IC |
|
(–)200 |
mA |
Peak Collector Current |
ICP |
|
(–)300 |
mA |
Collector Dissipation |
PC |
|
1.5 |
W |
|
|
Tc=50˚C |
15 |
W |
|
|
|
|
|
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73098HA (KT)/6248MO/4077TA, TS No.2528-1/4
2SA1476/2SC3782
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)150V, IE=0 |
|
|
(–)0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)2V, IC=0 |
|
|
(–)1.0 |
µA |
DC Current Gain |
hFE1 |
VCE=(–)10V, IC=(–)10mA |
40* |
|
320* |
|
|
hFE2 |
VCE=(–)10V, IC=(–)100mA |
20 |
|
|
|
Gain-Bandwidth Product |
fT |
VCE=(–)30V, IC=(–)50mA |
|
400 |
|
MHz |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)50mA, IB=(–)5mA |
|
|
0.6 |
V |
|
|
|
|
|
(–0.8) |
V |
|
|
|
|
|
|
|
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)50mA, IB=(–)5mA |
|
|
(–)1.0 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)200 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)200 |
|
|
V |
Emitter-to-Base Breakdown Votage |
V(BR)EBO |
IE=(–)100µA, IC=0 |
(–)4 |
|
|
V |
Output Capacitance |
Cob |
VCB=(–)30V, f=1MHz |
|
2.6 |
|
pF |
|
|
|
|
(3.1) |
|
pF |
|
|
|
|
|
|
|
Reverse Transfer Capacitance |
Cre |
VCB=(–)30V, f=1MHz |
|
2.1 |
|
pF |
|
|
|
|
(2.6) |
|
pF |
|
|
|
|
|
|
|
* : The 2SA1476/2SC3782 are classified by 10mA hFE as follows :
40 C 80 |
60 D 120 |
100 E 200 |
160 F 320 |
|
|
|
|
No.2528-2/4
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