Ordering number:EN1949B
NPN Epitaxial Planar Silicon Transistor
2SC3776
UHF Oscillator, Mixer, Low-Noise Amplifier,
Wide-Band Amplifier Applications
Applications
· UHF frequency converters, local oscillators, low-
noise amplifiers, wide-band amplifiers.
Features
·Small noise figure : NF=2.5dB typ (f=0.9GHz).
·High power gain : MAG=12dB typ (f=0.9GHz).
·High cutoff frequency :Tf=3.0GHz typ.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2004A
[2SC3776]
C : Collector
JEDEC : TO-92
E : Emitter
EIAJ : SC-43
B : Base
SANYO : NP
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
25 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
16 |
V |
Emitter-to-Base Voltage |
VEBO |
|
3 |
V |
Collector Current |
IC |
|
70 |
mA |
Base Current |
IB |
|
20 |
mA |
Collector Dissipation |
PC |
|
400 |
mW |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector Cutoff Current |
ICBO |
|
VCB=16V, IE=0 |
|
|
|
|
1.0 |
µA |
|||
Emitter Cutoff Current |
IEBO |
|
VEB=2V, IC=0 |
|
|
|
|
10 |
µA |
|||
DC Current Gain |
hFE |
|
VCE=10V, IC=10mA |
|
|
40* |
|
200* |
|
|||
Gain-Bandwidth Product |
fT |
|
VCE=10V, IC=10mA |
|
|
1.5 |
3.0 |
|
GHz |
|||
Output Capacitance |
Cob |
|
VCB=10V, f=1MHz |
|
|
|
0.7 |
1.0 |
pF |
|||
Reverse Transfer Capacitance |
Cre |
|
VCB=10V, f=1MHz |
|
|
|
0.45 |
|
pF |
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* : The 2SC3776 is classified by 10mA hFE as follows : |
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40 C 80 |
60 D 120 |
100 |
E 200 |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3098HA (KT)/5318MO/5137KI/O185KI, TS No.1949–1/5
2SC3776
Parameter |
Symbol |
Conditions |
|
|
Ratings |
|
Unit |
|
|
|
|
||||
|
|
|
min |
|
typ |
max |
|
|
|
|
|
|
|
|
|
Forward Transfer Gain |
| S21e |2 |
VCE=10V, IC=10mA, f=0.9GHz |
|
7 |
9 |
|
dB |
Maximum Available Power Gain |
MAG |
VCE=10V, IC=10mA, f=0.9GHz |
|
|
12 |
|
dB |
Noise Figure |
NF |
VCE=10V, IC=3mA, f=0.9GHz, |
|
|
2.5 |
|
dB |
|
|
See specified Test Circuit. |
|
|
|
|
|
NF Test Circuit
|
900MHz |
|
|
C1 |
~5pF |
C2 |
~10pF |
C3 |
~10pF |
C4 |
~10pF |
C5 |
~10pF |
L1 |
W ≈ 1.5mm, l ≈ 25mm |
|
Strip line |
L2 |
W ≈ 4mm, l ≈ 25mm |
|
Strip line |
L3 |
0.5φ, l ≈ 40mm |
CH |
2t+bead core |
|
|
No.1949–2/5
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