SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF Low-Noise Amplifier,
Wide-Band Amplifier Applications
Ordering number:EN1947B
2SC3774
Applications
· UHF low-noise amplifiers, wide-band amplifiers.
Features
· Small noise figure : NF=2.2dB typ (f=0.9GHz).
· High power gain : MAG=14dB typ (f=0.9GHz).
· High cutoff frequency : fT=5.0GHz typ.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
* : The 2SC3774 is classified by 20mA hFE as follows :
(Note) Marking : NY
hFE rank : 2, 3, 4
OBC
OEC
OBE
C
B
C
OBC
OBE
h
EF
T
bo
er
V
V
V
V
V
V
I,V21=
BC
E
I,V2=
BE
C
I,V01=
EC
C
I,V01=
EC
C
BC
BC
082040213060024001
Package Dimensions
unit:mm
2018A
[2SC3774]
C : Collector
B : Base
E : Emitter
SANYO : CP
02V
21V
3V
07Am
02Am
052Wm
sgnitaR
nimpytxam
0=0.1Aµ
0=01Aµ
Am02=
Am02=
zHM1=f,V01=
zHM1=f,V01=5.0Fp
*04*002
0.5zHG
57.00.1Fp
˚C
˚C
tinU
N3098HA (KT)/5318MO/5137KI/O185KI, TS No.1947–1/5
2SC3774
erugiFesioNFNVECI,V01=
NF Test Circuit
retemaraPlobmySsnoitidnoC
2
niaGrefsnarTdrawroF|e12S|
niaGrewoPelbaliavAmumixaMGAMVECI,V01=
V
EC
sgnitaR
nimpytxam
I,V01=
C
C
C
zHG9.0=f,Am02=
zHG9.0=f,Am02=
,zHG9.0=f,Am5=
.tiucriCtseTdeificepseeS
801Bd
41Bd
2.25.4Bd
tinU
1C
2C
3C
4C
5C
1L
2L
3L
HC
zHM009
Fp5~
Fp01~
Fp01~
Fp01~
Fp01~
W ≈ l,mm5.1 ≈ mm52
enilpirtS
W ≈ l,mm4 ≈ mm52
enilpirtS
5.0 φ l, ≈ mm04
erocdaeb+t2
No.1947–2/5