Sanyo 2SC3751 Specifications

Ordering number : ENN1970B

2SC3751

NPN Triple Diffused Planar Silicon Transistor

2SC3751

800V / 1.5A Switching Regulator Applications

Features

• High breakdown voltage and high reliability.

• Fast switching speed.

• Wide ASO.

• Adoption of MBIT process.

• Micaless package facilitating mounting.

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

B

C

PW≤300µs, Duty Cycle≤10% 5 A

Tc=25°C25W

Package Dimensions

unit : mm

2041A

[2SC3751]

10.0

3.2

18.1

5.6

1

2.55

2.55

1.6

1.2

0.75

23

2.55

2.55

3.5

7.2

2.4

4.5

2.8

16.0

2.4

0.7

14.0

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220ML

1100 V

800 V

7V

1.5 A

0.8 A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=800V, IE=0 10 µA
VEB=5V, IC=0 10 µA

Unit

Continued on next page.

92001 TS IM / N3098HA (KT)/4237 AT / 2046 KI, TS

No.1970-1/4

2SC3751

Continued from preceding page.

Parameter Symbol Conditions

DC Current Gain
Gain-Bandwidth Product f

Output Capacitance Cob VCB=10V , f=1MHz 35 pF
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=0.75A, IB=0.15A 1.5 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Collector-to-Emitter Sustain Voltage V
Turn-On Time t
Storage Time t
Fall Time t

* : The hFE1 of the 2SC3751 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.

Rank KLM

hFE10 to 20 15 to 30 20 to 40

hFE1VCE=5V, IC=0.1A 10* 40*
hFE2VCE=5V, IC=0.5A 8

VCE=10V, IC=0.1A 15 MHz

T

VCE(sat) IC=0.75A, IB=0.15A 2.0 V

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

(sus) IC=0.75A, IB1=--IB2=0.15A, L=5mH, clamped 800 V

CEX

on

stg

f

=1mA, IE=0 1100 V
=5mA, RBE=∞ 800 V
=1mA, IC=0 7 V

VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400Ω 0.5 µs
VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400Ω 3.0 µs
VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400Ω 0.3 µs

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1
I

B2

OUTPUT

Ratings

min typ max

Unit

INPUT

50Ω

1.6

1.4

A

1.2

-­C

1.0

V

R

I

R

B

+

100µF 470µF

C -- VCE

+

VCC=400VVBE= --5V

120mA

R

L

400Ω

100mA

0.8

80mA

60mA

0.6

0.4

Collector Current, I

0.2

0

02 6481015379

Collector-to-Emitter Voltage, V

10

7
5

3
2

(sat) -- V

1.0

CE

7
5

3
2

0.1
7

Collector-to-Emitter

Saturation V oltage, V

5
3

2

VCE(sat) -- I

3257 3257

0.10.01 1.0

Collector Current, I

--40

C

°C

C --

40mA

20mA

10mA

5mA

CE --

25°C

A

I

=0

B

V

ITR05871

IC / IB=5

°C

120

Ta=

ITR05873

h

2

100

7

FE

DC Current Gain, h

(sat) -- V

BE

1.0

Base-to-Emitter

Saturation V oltage, V

2

Ta=120°C

5

3

2

10

7
5

3

10

7
5

3

2

25°C

--40°C

23 57 23 57

Ta= --40°C

7
5

25°C

120°C

3
2

3257 3257

FE -- IC

0.10.01 1.0

Collector Current, I

VBE(sat) -- I

0.10.01 1.0

Collector Current, I

C --

C

C --

A

A

VCE=5V

2

ITR05872

IC / IB=5

2

ITR05874

No.1970-2/4

I

1.6

1.4

A

1.2

-­C

1.0

0.8

0.6

0.4

Collector Current, I

0.2

0

0 0.2 0.4 0.6 0.8 1.0 1.2

C -- VBE

Ta=120°C

25°C

--40°C

Base-to-Emitter V oltage, VBE -- V

10

ICP=5A

7
5

3
2

IC=1.5A

1.0

-- A

7

C

5
3

2

0.1
7
5

3
2

Collector Current, I

0.01
7

Tc=25°C

5

Single pulse

3

57 2 33572357

Forward Bias A S O

DC operation

1ms

10ms

10010

Collector-to-Emitter Voltage, VCE -- V

32

P

C --

Tc

2SC3751

VCE=5V

Switching Time, SW Time -- µs

ITR05875

100µs

-- A
C

Collector Current, I

1000 100

ITR05877

10

7
5

3
2

1.0
7

5

3
2

0.1
7

5

0.1

10

7
5

3
2

1.0
7
5

3
2

0.1

IB2= --0.15A

7

Tc=25°C

5

SW Time -- I

t

stg

t

f

357

2352

Collector Current, IC -- A

1.0

C

on

t

ITR05876

Reverse Bias A S O

2253757

Collector-to-Emitter Voltage, VCE -- V

1000

ITR05878

28

25

24

-- W
C

20

16

12

8

Collector Dissipation, P

4

0

2006040 80 100 140120 160

Case Temperature, Tc -- °C

ITR05879

No.1970-3/4

2SC3751

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of September, 2001. Specifications and information herein are subject
to change without notice.

No.1970-4/4

PS