SANYO 2SC3751 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
800V/1.5A Switching Regulator Applications
Ordering number:EN1970A
2SC3751
Features
· High breakdown voltage and high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The hFE1 of the 2SC3751 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
02K0103L5104M02
OBC OEC OBE
C
PW300µs, Duty Cycle10%
PC
B
Tc=25˚C
C
V
OBC OBE
hEF1VECI,V5= hEF2VECI,V5=
T
bo
BC
V
BE
V
EC
V
BC
Package Dimensions
unit:mm
2041A
[2SC3751]
nimpytxam
I,V008=
0=01Aµ
E
I,V5=
0=01Aµ
C
A1.0=
C
A5.0=
C
I,V01=
A1.0=
C
zHM1=f,V01=
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
sgnitaR
*01*04
8
51zHM 53Fp
0011V 008V 7V
5.1A 5A
8.0A 52W
˚C ˚C
tinU
N3098HA (KT)/4237AT/2046KI, TS No.1970–1/4
2SC3751
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV egatloVnwodkaerBesaB-ot-rettimEV egatloVniatsuSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(XEC
C
V
no
V
gts
V
f
I,A57.0=
A51.0=
B
I,A57.0=
A51.0=
B
I,Am1=
0=0011V
E
R,Am5=
= 008V
EB
I,Am1=
0=7V
C
I,A57.0=
I–=
1B
2B
I5,V004=
CC CC CC
I5.2–=
1B
I5,V004= I5,V004=
2BI=C
I5.2–=
1B
2BI=C
I5.2–=
1B
2BI=C
Switching Time Test Circuit
sgnitaR
nimpytxam
depmalC,Hm5=L,A51.0=008V
R,A1=
004=
L
R,A1=
004=
L
R,A1=
004=
L
tinU
0.2V
5.1V
5.0sµ
0.3sµ
3.0sµ
No.1970–2/4
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