SANYO 2SC3747, 2SA1470 Datasheet

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SANYO 2SC3747, 2SA1470 Datasheet

Ordering number:EN1972A

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1470/2SC3747

60V/7A High-Speed Switching Applications

Applications

·Inductance, lamp drivers.

·Inveters, conveters (strobes, flashes, FLT lighting circiuts).

·Power amplifiers (high-power car stereos, motor control).

·High-speed switching (switching regulators, drivers).

Features

· Low saturation votlage.

· Excellent dependence of h on current.

FE

·Fast switching time.

·Micaless package facilitating mounting.

( ) : 2SA1470

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2041

[2SA1470/2SC3747]

1 : Emitter

2 : Collector

3 : Base

JEDEC : TO-220ML

Parameter

Symbol

Conditions

Ratings

Unit

 

 

 

 

 

Collector-to-Base Voltage

VCBO

 

(–)80

V

Collector-to-Emitter Voltage

VCEO

 

(–)60

V

Emitter-to-Base Voltage

VEBO

 

(–)5

V

Collector Current

IC

 

(–)7

A

Collector Current (Pulse)

ICP

 

(–)10

A

Collector Dissipation

PC

 

2

W

 

 

Tc=25˚C

25

W

 

 

 

 

 

Junction Temperature

Tj

 

150

˚C

 

 

 

 

 

Storage Temperature

Tstg

 

–55 to +150

˚C

 

 

 

 

 

Electrical Characteristics at Ta = 25˚C

Parameter

Symbol

Conditions

 

Ratings

 

Unit

 

 

 

 

 

 

min

typ

max

 

 

 

 

 

 

 

 

Collector Cutoff Current

ICBO

VCB=(–)40V, IE=0

 

 

(–)0.1

mA

Emitter Cutoff Current

IEBO

VEB=(–)4V, IC=0

 

 

(–)0.1

mA

DC Current Gain

hFE

VCE=(–)2V, IC=(–)1A

70*

 

280*

 

Gain-Bandwidth Product

fT

VCE=(–)5V, IC=(–)1A

 

100

 

MHz

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=(–)3.5A, IB=(–)0.175A

 

 

(–)0.4

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=(–)1mA, IE=0

(–)80

 

 

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=(–)1mA, RBE=

(–)60

 

 

V

Emitter-to-Base Breakdown Votage

V(BR)EBO

IE=(–)1mA, IC=0

(–)5

 

 

V

Turn-ON Time

ton

See specified Test Circuit

 

0.1

 

µs

Storage Time

tstg

See specified Test Circuit

 

0.5

 

µs

Fall Time

tf

See specified Test Circuit

 

0.1

 

µs

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/3277KI/N265KI, TS No.1972-1/3

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