SANYO 2SC3675 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
900V/100mA High-Voltage Amplifier
High-Voltage Switching Applications
Ordering number:EN1800E
2SC3675
Applications
· High voltage amplifiers.
· High-voltage switching applications.
· Dynamic focus applications.
Features
· High breakdown voltage (V
· Small Cob (Cob typ=2.8pF).
· Wide ASO (Adoption of MBIT process).
· High reliability (Adoption of HVP process).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rettimEV
ecnaticapaCtuptuOboCV
min=900V).
CEO
C
PC
C
h
EF
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
T
Package Dimensions
unit:mm
2010C
[2SC3675]
JEDEC : T O-220AB
EIAJ : SC46
OBC
OEC
OBE
Tc=25˚C
V
OBC
V
OBE
V
V
I
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V009=
BC
BE
EC
EC
BC
0=01Aµ
E
I,V4=
0=01Aµ
C
I,V5=
Am01=
C
I,V01=
Am01=
C
I,Am02=
Am4=
B
I,Am02=
Am4=
B
I,Am1=
0=0051V
E
∞ 009V
R,Am1=
=
EB
I,Am1=
0=5V
C
zHM1=f,V001=
1 : Base
2 : Collector
3 : Emitter
sgnitaR
nimpytxam
03
6zHM
8.2Fp
0051V
009V
5V
001Am
003Am
01W
˚C
˚C
tinU
5V
2V
N2098HA (KT)/80796TS (KOTO) 8-9202/4237AT/3195KI, TS No.1800–1/3
2SC3675
No.1800–2/3
Loading...