Ordering number:EN1854A
NPN Epitaxial Planar Silicon Transistor
2SC3661
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Applications
· Low frequency general-purpose amplifiers, drivers,
muting circuit.
Features
· Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer.
· Adoption of FBET process.
· High DC current gain (h =800 to 3200).
FE
· Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V). |
≥15V). |
|
· High V (V |
EBO |
|
EBO |
|
|
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2018A
[2SC3661]
C : Collector
B : Base
E : Emitter
SANYO : CP
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
30 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
25 |
V |
Emitter-to-Base Voltage |
VEBO |
|
15 |
V |
Collector Current |
IC |
|
300 |
mA |
Collector Current (Pulse) |
ICP |
|
500 |
mA |
Collector Dissipation |
PC |
|
200 |
mW |
Junction Temperature |
Tj |
|
125 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +125 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
|
Conditions |
|
Ratings |
|
Unit |
|
|
|
|
||||
|
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=20V, IE=0 |
|
|
|
0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=10V, IC=0 |
|
|
|
0.1 |
µA |
DC Current Gain |
hFE |
VCE=5V, IC=10mA |
|
800 |
1500 |
3200 |
|
Gain-Bandwidth Product |
fT |
VCE=10V, IC=10mA |
|
|
250 |
|
MHz |
Output Capacitance |
Cob |
VCB=10V, f=1MHz |
|
|
2.7 |
|
pF |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=200mA, IB=4mA |
|
|
0.12 |
0.5 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=200mA, IB=4mA |
|
|
0.85 |
1.2 |
V |
Marking : FY
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2098HA (KT)/4237AT/N195KI, TS No.1854–1/3
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