SANYO 2SC3651 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Ordering number:EN1779A
2SC3651
Applications
· LF amplifiers, various drivers, muting circuit.
Features
· High DC current gain (hFE=500 to 2000).
· High breakdown voltage (V
· Low collector-to-emitter saturation voltage
(V
· High V
CE(sat)
≤0.5V).
(V
EBO
EBO
≥15V).
· Very small size making it easy to provide highdensity, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
* Mounted on ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
Marking : CG
CEO
≥100V).
C
PC
C
PC* 3.1W
OBC
OBE
hEF1VECI,V5=
hEF2VECI,V5=
T
bo
Package Dimensions
unit:mm
2038
[2SC3651]
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
OBC
OEC
OBE
nimpytxam
V
V
V
V
I,V08=
BC
BE
EC
BC
0=1.0Aµ
E
I,V01=
0=1.0Aµ
C
Am01=
C
Am001=
C
I,V01=
Am01=
C
zHM1=f,V01=
00500010002
004
021V
001V
51V
002Am
003Am
005Wm
sgnitaR
051zHM
5.6Fp
˚C
˚C
tinU
N2098HA (KT)/4217KI/2145KI, TS No.1779–1/3
2SC3651
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Am001=
Am2=
B
I,Am001=
Am2=58.02.1V
B
I,Aµ01=
0=021V
E
I,Am1=
0=001V
B
I,Aµ01=
0=51V
C
sgnitaR
nimpytxam
51.05.0V
tinU
No.1779–2/3
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