SANYO 2SC3650 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Ordering number:EN1780A
2SC3650
Applications
· LF amplifiers, various drivers, muting circuit.
Features
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage
(V
· Large current capacity (IC=1.2V).
· Very small size making it easy to provide highdensity, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
* Mounted on ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Marking : CF
≤0.5V).
CE(sat)
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
C
PC
C
PC* 5.1W
OBC
OBE
hEF1VECI,V5=
hEF2VECI,V5=
T
bo
Package Dimensions
unit:mm
2038
[2SC3650]
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
OBC
OEC
OBE
nimpytxam
V
V
V
V
I,V02=
BC
BE
EC
BC
0=1.0Aµ
E
I,V01=
0=1.0Aµ
C
Am005=
C
Am01=
C
I,V01=
Am05=
C
zHM1=f,V01=
00800510023
006
03V
52V
51V
2.1A
2A
005Wm
sgnitaR
022zHM
71Fp
˚C
˚C
tinU
N2098HA (KT)/4227KI/3185KI, TS No.1780–1/3
2SC3650
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Am005=
Am01=
B
I,Am005=
Am01=58.02.1V
E
I,Aµ01=
0=03V
E
R,Am1=
=∞ 52V
EB
I,Aµ01=
0=51V
C
sgnitaR
nimpytxam
21.05.0V
tinU
No.1780–2/3
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