Ordering number:EN2007A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1419/2SC3649
High-Voltage Switching Applications
Features
·Adoption of FBET, MBIT processes.
·High breakdown voltage and large current capacity.
·Very small size making it easy to provide highdensity hybrid ICs.
( ) : 2SA1419
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2038
[2SA1419/2SC3649]
E : Emitter
C : Collector
B : Base
SANYO : PCP (Bottom view)
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)180 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)160 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)6 |
V |
Collector Current |
IC |
|
(–)1.5 |
A |
Collector Current (Pulse) |
ICP |
|
(–)2.5 |
A |
Collector Dissipation |
PC |
|
500 |
mW |
|
|
Moutned on ceramic board (250mm2×0.8mm) |
1.5 |
W |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)120V, IE=0 |
|
|
(–)1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
|
|
(–)1 |
µA |
DC Current Gain |
hFE1 |
VCE=(–)5V, IC=(–)100mA |
100* |
|
400* |
|
|
hFE2 |
VCE=(–)5V, IC=(–)10mA |
80 |
|
|
|
Gain-Bandwidth Product |
fT |
VCE=(–)10V, IC=(–)50mA |
|
120 |
|
MHz |
Output Capacitance |
Cob |
VCB=(–)10V, f=1MHz |
|
(22) |
|
pF |
|
|
|
|
14 |
|
pF |
|
|
|
|
|
|
|
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)500mA, IB=(–)50mA |
|
(–200) |
(–500) |
mV |
|
|
|
|
130 |
450 |
mV |
|
|
|
|
|
|
|
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)500mA, IB=(–)50mA |
|
(–)0.85 |
(–)1.2 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)180 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)160 |
|
|
V |
Emitter-to-Base Breakdown Votage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)6 |
|
|
V |
Turn-ON Time |
ton |
See specified Test Circuit. |
|
(40) |
|
ns |
|
|
|
|
40 |
|
ns |
|
|
|
|
|
|
|
Stotage Time |
tstg |
See specified Test Circuit. |
|
(0.7) |
|
µs |
|
|
|
|
1.2 |
|
µs |
|
|
|
|
|
|
|
Fall Time |
tf |
See specified Test Circuit. |
|
(40) |
|
ns |
|
|
|
|
80 |
|
ns |
|
|
|
|
|
|
|
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4277TA, TS No.2007-1/4
2SA1419/2SC3649
* : The 2SA1419/2SC3649 are classified by 100mA hFE as follows :
|
100 R 200 |
140 |
S 280 |
200 T 400 |
|
|
|
|
|
Marking 2SA1419 : AE |
hFE rank : R, S, T |
|||
|
2SC3649 : CE |
|
|
|
Switching Time Test Circuit
(For PNP, the polarity is reversed)
Unit (resistance : Ω, capacitance : F)
No.2007-2/4
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