Sanyo 2SC3576 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Ordering number:EN1799D
2SC3576
Applications
· LF general-purpose amplifiers, various drivers,
muting circuit.
Features
· Adoption of FBET process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage
(V
· High V
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
≤0.5V).
CE(sat)
(V
EBO
tnerruCrotcelloCI
tnerruCesaBI
niaGtnerruCCD
ecnaticapaCtuptuOC
≥15V).
EBO
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
C
PC
B
C
OBC
OBE
h
EF
T
bo
Package Dimensions
unit:mm
2033
[2SC3576]
B : Base
C : Collector
E : Emitter
SANYO : SPA
OBC
OEC
OBE
nimpytxam
V
V
V
V
V
I
)tas(EC
C
I
)tas(EB
C
I,V02=
BC
BE
EC
EC
BC
0=1.0Aµ
E
I,V01=
0=1.0Aµ
C
I,V5=
Am01=
C
I,V01=
Am01=
C
zHM1=f,V01=
I,Am002=
Am4=
B
I,Am002=
Am4=58.02.1V
B
00800510023
03V
52V
51V
003Am
005Am
06Am
003Wm
˚C
˚C
sgnitaR
052zHM
7.2Fp
21.05.0V
tinU
N2098HA (KT)/6140MO/4227KI/N275KI/3D185KI, TS No.1799–1/3
2SC3576
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
I,Aµ01=
C
C
E
0=03V
E
R,Am1=
=∞ 52V
EB
I,Aµ01=
0=51V
C
sgnitaR
nimpytxam
tinU
No.1799–2/3
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