Ordering number:EN1425C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1380/2SC3502
Ultrahigh-Definition CRT Display,
Video Output Applications
Features
· High breakdown voltage : V
· Small reverse transfer capacitance and excellent
high-frequnecy characteristics
: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.
· Adoption of FBET process
( ) : 2SA1380
CEO
≥200V.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Tc=25˚C
Package Dimensions
unit:mm
2009B
[2SA1380/2SC3502]
JEDEC : TO-126 1 : Emitter
2 : Collector
3 : Base
002)–(V
002)–(V
5)–(V
001)–(Am
002)–(Am
2.1W
5W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
V
OBC
V
OBE
V
EF
V
T
V
bo
V
er
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
* : The 2SA1380/2SC3502 are classified by 10mA hFE as follows :
08C04021D06002E001023F061
I,V051)–(=
BC
=BE
EC
EC
BC
BC
0=1.0)–(Aµ
E
I,V4)–(
0=1.0)–(Aµ
C
I,V01)–(=
C
I,V03)–(=
C
I,Am02)–(=
B
I,Am02)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am01)–(=*04*023
Am01)–(=051zHM
zHM1=f,V03)–(=
zHM1=f,V03)–(=
Am2)–(=6.0)–(V
Am2)–(=0.1)–(V
0=002)–(V
=∞ 002)–(V
EB
0=5)–(V
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/10996TS (KOTO) X-6422/3237KI/D134MW, TS No.1425-1/4
sgnitaR
7.1Fp
)6.2(Fp
2.1Fp
)7.1(Fp
tinU