Ordering number:EN1412C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1370/2SC3467
High-Definition CRT Display,
Video Output Applications
Use
· Color TV chroma output and high breakdown voltage
driver.
Features
· High breakdown voltage : V ≥200V.
CEO
·Small reverse transfer capacitance and excellent high frequency characteristic
:Cre=1.2pF (NPN), 1.7pF (PNP).
·Adoption of FBET process.
( ) : 2SA1370
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2006A
[2SA1370/2SC3467]
EIAJ : SC-51 |
B : Base |
SANYO : MP |
C : Collector |
|
E : Emitter |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)200 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)200 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)5 |
V |
Collector Current |
IC |
|
(–)100 |
mA |
Collector Current (Pulse) |
ICP |
|
(–)200 |
mA |
Collector Dissipation |
PC |
|
1.0 |
W |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)150, IE=0 |
|
|
(–)0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
|
|
(–)0.1 |
µA |
DC Current Gain |
hFE |
VCE=(–)10V, IC=10mA |
40* |
|
320* |
|
Gain-Bandwidth Product |
fT |
VCE=(–)30V, IC=(–)10mA |
|
150 |
|
MHz |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)20mA, IB=(–)2mA |
|
|
(–)0.6 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)20mA, IB=(–)2mA |
|
|
(–)1.0 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)200 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)200 |
|
|
V |
Emitter-to-Base Breakdown Votage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)5 |
|
|
V |
Output Capacitance |
Cob |
VCB=(–)30V, f=1MHz |
|
1.7 |
|
pF |
|
|
|
|
(2.6) |
|
pF |
|
|
|
|
|
|
|
Reverse Transfer Capacitance |
Cre |
VCB=(–)30V, f=1MHz |
|
1.2 |
|
pF |
|
|
|
|
(1.7) |
|
pF |
|
|
|
|
|
|
|
* : The 2SA1370/2SC3467 are classified by 10mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/6140MO/3237KI/3135KI/1114KI, TS No.1412-1/4
2SA1370/2SC3467
No.1412-2/4
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