Ordering number:EN1207A
NPN Triple Diffused Planar Silicon Transistor
2SC3277
400V/10A Switching Regulator Applications
Features |
Package Dimensions |
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· High breakdown voltage, high current. |
unit:mm |
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· Wide ASO. |
2022A |
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· Fast switching speed. |
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[2SC3277] |
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1 : Base |
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2 : Collector |
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3 : Emitter |
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Specifications |
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SANYO : TO-3PB |
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Absolute Maximum Ratings at Ta = 25˚C |
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Parameter |
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Symbol |
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Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
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VCBO |
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500 |
V |
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Collector-to-Emitter Voltage |
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VCEO |
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400 |
V |
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Emitter-to-Base Voltage |
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VEBO |
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7 |
V |
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Collector Current |
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IC |
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10 |
A |
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Collector Current (Pulse) |
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ICP |
PW≤300 s, Duty Cycle≤10% |
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20 |
A |
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Collector Dissipation |
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PC |
Tc=25˚C |
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90 |
W |
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Junction Temperature |
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Tj |
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150 |
˚C |
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Storage Temperature |
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Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C |
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Parameter |
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Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
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typ |
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max |
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Collector Cutoff Current |
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ICBO |
VCB=400V, IE=0 |
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10 |
µA |
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Emitter Cutoff Current |
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IEBO |
VEB=5V, IC=0 |
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10 |
µA |
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DC Current Gain |
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hFE1 |
VCE=5V, IC=1.2A |
15* |
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50* |
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hFE2 |
VCE=5V, IC=6A |
8 |
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Gain-Bandwidth Product |
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fT |
VCE=10V, IC=1.2A |
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20 |
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MHz |
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Output Capacitance |
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Cob |
VCB=10V, f=1MHz |
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120 |
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pF |
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* : The hFE1 of the 2SC3277 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. |
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15 L 30 |
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20 M 40 |
30 N 50 |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/5097KI/2125MW, TS No.1207–1/4
2SC3277
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=6A, IB=1.2A |
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1.0 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=6A, IB=1.2A |
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1.5 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=1mA, IE=0 |
500 |
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V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=5mA, RBE=∞ |
400 |
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V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=1mA, IC=0 |
7 |
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V |
Collector-to-Emitter Sustain Voltage |
VCEO(sus) |
IC=10A, IB=2A, L=50µH |
400 |
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V |
Collector-to-Emitter Sustain Voltage |
VCEX(sus)1 |
IC=10A, IB1=2A, L=200µH, IB2=–2A, clamped |
400 |
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V |
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VCEX(sus)2 |
IC=2.5A, IB1=0.5A, L=200µH, IB2=–0.5A, clamped |
450 |
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V |
Turn-ON Time |
ton |
IC=7A, IB1=1.4A, IB2=–1.4A, RL=28.6Ω, |
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1.0 |
µs |
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VCC=200V |
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Storage Time |
tstg |
IC=7A, IB1=1.4A, IB2=–1.4A, RL=28.6Ω, |
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2.5 |
µs |
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VCC=200V |
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Fall Time |
tf |
IC=7A, IB1=1.4A, IB2=–1.4A, RL=28.6Ω, |
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1.0 |
µs |
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VCC=200V |
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Switching Time Test Circuit
No.1207–2/4
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