Sanyo 2SC3277 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
400V/10A Switching Regulator Applications
Ordering number:EN1207A
2SC3277
Features
· High breakdown voltage, high current.
· Wide ASO.
· Fast switching speed.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The hFE1 of the 2SC3277 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
03L5104M0205N03
OBC OEC OBE
C
PW300µs, Duty Cycle10%
PC
Tc=25˚C
C
V
OBC OBE
hEF1VECI,V5= hEF2VECI,V5=
T
bo
BC
V
BE
V
EC
V
BC
Package Dimensions
unit:mm
2022A
[2SC3277]
nimpytxam
I,V004=
0=01Aµ
E
I,V5=
0=01Aµ
C
A2.1=
C
A6=
C
I,V01=
A2.1=
C
zHM1=f,V01=
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
sgnitaR
*51*05
8
02zHM 021Fp
005V 004V 7V 01A 02A 09W
˚C ˚C
tinU
N1098HA (KT)/5097KI/2125MW, TS No.1207–1/4
2SC3277
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV egatloVnwodkaerBesaB-ot-rettimEV egatloVniatsuSrettimE-ot-rotcelloCV egatloVniatsuSrettimE-ot-rotcelloC
emiTNO-nruTt
emiTegarotSt
emiTllaFt
V V
I
I,A6=
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(OEC
C
I
1)sus(XEC
C
I
2)sus(XEC
C
I
no
C
V
CC
I
gts
C
V
CC
I
f
C
V
CC
A2.1=
B
I,A6=
A2.1=
B
I,Am1=
0=005V
E
R,Am5=
= 004V
EB
I,Am1=
0=7V
C
I,A01=
B
I,A01=
1B
I,A5.2=
1B
I,A7=
1B V002=
I,A7=
1B V002=
I,A7=
1B V002=
Hµ05=L,A2=004V
I,A4.1=
2B
I,A4.1=
2B
I,A4.1=
2B
Switching Time Test Circuit
sgnitaR
nimpytxam
I,Hµ002=L,A2=
2B
I,Hµ002=L,A5.0=
2B
R,A4.1–=
L
R,A4.1–=
L
R,A4.1–=
L
depmalc,A2–=004V
depmalc,A5.0–=
6.82= ,
6.82= ,
6.82= ,
054V
tinU
0.1V
5.1V
0.1sµ
5.2sµ
0.1sµ
No.1207–2/4
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