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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
800V/6A Switching Regulator Applications
Ordering number:EN1072D
2SC3153
Features
· High breakdown voltage (V
· Fast switching speed.
· Wide ASO.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
CBO
≥900V).
C
PC
B
C
Package Dimensions
unit:mm
2022A
OBC
OEC
OBE
Pulse, PW≤300µs, Duty Cycle≤10%
Tc=25˚C
[2SC3153]
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
009V
008V
7V
6A
02A
3A
001W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
hEF1VECI,V5=
hEF2VECI,V5=
V
OBC
V
OBE
V
T
V
bo
I,V008=
BC
BE
EC
BC
0=01Aµ
E
I,V5=
0=01Aµ
C
A4.0=
C
A2=
C
I,V01=
A4.0=
C
zHM1=f,V01=
* : For the hFE1 of the 2SC3153, specify two ranks or more in principle.
02K0103L5104M02
N3098HA (KT)/N1596TS (KOTO) X-0131/5097KI/4123KI, TS No.1072–1/4
nimpytxam
8
sgnitaR
*01*04
51zHM
021Fp
tinU
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2SC3153
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
egatloVniatsuSrettimE-ot-rotcelloCV
egatloVniatsuSrettimE-ot-rotcelloC
emiTNO-nruTt
emiTegarotSt
emiTllaFt
V
V
I
I,A3=
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(OEC
C
I
1)sus(XEC
C
I
2)sus(XEC
C
I
no
C
I
gts
C
I
f
C
A6.0=
B
I,A3=
A6.0=
B
I,Am1=
0=009V
E
R,Am5=
=∞ 008V
EB
I,Am1=
0=7V
C
I,Hµ002=L,A6=
A2=008V
I,A2=
I,A1=
I,A4=
I,A4=
I,A4=
B
I,A4.0=
1B
1B
1B
1B
1B
2B
I,A2.0=
2B
I,A8.0=
2B
I,A8.0=
2B
I,A8.0=
2B
Switching Time Test Circuit
sgnitaR
nimpytxam
depmalc,Hm1=L,A4.0–=008V
depmalc,Hm2=L,A2.0–=
R,A6.1–=
001= Ω V,
L
R,A6.1–=
001= Ω V,
L
R,A6.1–=
001= Ω V,
L
V004=
CC
V004=
CC
V004=
CC
009V
tinU
0.2V
5.1V
0.1sµ
0.3sµ
7.0sµ
No.1072–2/4