Sanyo 2SC3152 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
800V/3A Switching Regulator Applications
Ordering number:EN1071D
2SC3152
Features
· High breakdown voltage (V
· Fast switching speed.
· Wide ASO.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
CBO
900V).
C
PC
B
C
Package Dimensions
unit:mm
2022A
OBC OEC OBE
Pulse, PW300µs, Duty Cycle10%
Tc=25˚C
[2SC3152]
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
009V 008V 7V 3A 01A
5.1A 08W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
hEF1VECI,V5= hEF2VECI,V5=
V
OBC
V
OBE
V
T
V
bo
I,V008=
BC BE
EC BC
0=01Aµ
E
I,V5=
0=01Aµ
C
A2.0=
C
A1=
C
I,V01=
A2.0=
C
zHM1=f,V01=
* : For the hFE1 of the 2SC3152, specify two ranks or more in principle.
02K0103L5104M02
N3098HA (KT)/40196TS (KOTO)X-0131/5097KI/7054KI, TS No.1071–1/4
nimpytxam
8
sgnitaR
*01*04
51zHM 06Fp
tinU
2SC3152
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV egatloVnwodkaerBesaB-ot-rettimEV egatloVniatsuSrettimE-ot-rotcelloCV egatloVniatsuSrettimE-ot-rotcelloC
emiTNO-nruTt
emiTegarotSt
emiTllaFt
V V
I
I,A5.1=
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(OEC
C
I
1)sus(XEC
C
I
2)sus(XEC
C
I
no
C
I
gts
C
I
f
C
A3.0=
B
I,A5.1=
A3.0=
B
I,Am1=
0=009V
E
R,Am5=
= 008V
EB
I,Am1=
0=7V
C
I,Hµ05=L,A3=
A1=008V
I,A1=
I,A2= I,A2= I,A2=
B
I,A2.0=
1B
I,A5.0=
1B 1B 1B
2B
I,A4.0=
1B
2B
I,A4.0=
2B
I,A4.0=
2B
I,A4.0=
2B
Switching Time Test Circuit
sgnitaR
nimpytxam
depmalc,Hm2=L,A2.0–=008V
depmalc,Hm5=L,A1.0–=
R,A8.0–=
02= V,
L
R,A8.0–=
02= V,
L
R,A8.0–=
02= V,
L
V004=
CC
V004=
CC
V004=
CC
009V
tinU
0.2V
5.1V
0.1sµ
0.3sµ
7.0sµ
No.1071–2/4
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