Ordering number:ENN1048C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1252/2SC3134
High VEBO, AF Amp Applications
Features
· High V .
EBO
· Wide ASO and high durability against breakdown.
Package Dimensions
unit:mm
2018B
( ) : 2SA1252
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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[2SA1252/2SC3134] |
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0.4 |
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0.5 |
0.16 |
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3 |
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0 to 0.1 |
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1.5 |
2.5 |
1 |
0.95 |
0.95 |
2 |
0.5 |
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1.9 |
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2.9 |
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1.1 |
1 |
: Base |
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0.8 |
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2 |
: Emitter |
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3 |
: Collector |
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SANYO : CP |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
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Collector-to-Base Voltage |
VCBO |
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(–)60 |
V |
Collector-to-Emitter Voltage |
VCEO |
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(–)50 |
V |
Emitter-to-Base Voltage |
VEBO |
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(–)15 |
V |
Collector Current |
IC |
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(–)150 |
mA |
Collector Current (Pulse) |
ICP |
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(–)300 |
mA |
Collector Dissipation |
PC |
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200 |
mW |
Junction Temperature |
Tj |
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125 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +125 |
˚C |
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Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector Cutoff Current |
ICBO |
VCB=(–)40V, IE=0 |
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(–)0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)10V, IC=0 |
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(–)0.1 |
µA |
DC Current Gain |
hFE |
VCE=(–)6V, IC=(–)1mA |
90* |
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560* |
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Gain-Bandwidth Product |
fT |
VCE=(–)6V, IC=(–)1mA |
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100 |
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MHz |
Output Capacitance |
Cob |
VCB=(–)6V, f=1MHz |
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(3.5) |
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pF |
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2.2 |
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* : The 2SA1252/2SC3134 are classified as follows according to hFE at 1mA : |
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Continued on next page. |
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Marking 2SA1252 : D |
Rank |
4 |
5 |
6 |
7 |
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2SC3134 : H |
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hFE |
90 to 180 |
135 to 270 |
200 to 400 |
300 to 600 |
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hFE rank : 4, 5, 6, 7 |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/3187AT/3155MW, TS No.1048-1/4
2SA1252/2SC3134
Continued from preceding page.
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)50mA, IB=(–)5mA |
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(–)0.5 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)60 |
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V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)50 |
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V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)15 |
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V |
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--50 |
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IC -- VCE |
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50 |
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IC -- VCE |
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2SA1252 |
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2SC3134 |
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From top |
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A |
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From top |
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A |
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250 |
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250 |
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--500 A |
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-- |
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500 A |
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A |
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--40 |
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mA |
--450 A |
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--200 A |
mA |
40 |
450 A |
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200 |
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--400 A |
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400 A |
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– |
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--350 A |
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350 A |
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150 |
A |
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--150 A |
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C |
--30 |
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C |
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--300 A |
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30 |
300 A |
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I |
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I |
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Current, |
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Current, |
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A |
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--100A |
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100 |
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Collector |
--20 |
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Collector |
20 |
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--50 A |
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50 A |
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--10 |
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10 |
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I |
B |
=0 |
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I |
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=0 |
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00 |
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00 |
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B |
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--0.2 |
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--0.4 |
--0.6 |
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--0.8 |
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--1.0 |
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0.2 |
0.4 |
0.6 |
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0.8 |
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1.0 |
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Collector-to-Emitter Voltage, VCE |
– |
V ITR03076 |
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Collector-to-Emitter Voltage, VCE |
– |
V ITR03077 |
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--20 |
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IC -- VCE |
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20 |
A |
IC -- VCE |
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A |
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2SA1252 |
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2SC3134 |
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70 |
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70 |
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A |
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-- |
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A |
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60 |
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mA |
--16 |
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-- |
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A |
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mA |
16 |
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A |
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50 |
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-- |
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– |
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– |
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50 |
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C |
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A |
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40 |
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C |
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--12 |
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-- |
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12 |
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A |
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I |
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I |
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40 |
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Current, |
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Current, |
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30 |
A |
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-- |
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30A |
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Collector |
--8 |
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20 |
A |
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Collector |
8 |
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-- |
--10 |
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20A |
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--4 |
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A |
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4 |
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10 A |
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00 |
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IB=0 |
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00 |
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I |
B |
=0 |
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--10 |
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--20 |
--30 |
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--40 |
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--50 |
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10 |
20 |
30 |
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40 |
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50 |
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Collector-to-Emitter Voltage, VCE |
– |
V ITR03078 |
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Collector-to-Emitter Voltage, VCE |
– |
V ITR03079 |
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--100 |
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IC -- VBE |
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100 |
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IC -- VBE |
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2SA1252 |
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2SC3134 |
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VCE=--6V |
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VCE=6V |
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mA |
--80 |
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Pulse |
mA |
80 |
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Pulse |
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– |
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– |
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C |
--60 |
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C |
60 |
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I |
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Current, |
--40 |
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Current, |
40 |
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Collector |
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Collector |
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--20 |
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00 |
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--0.4 |
|
--0.8 |
|
--1.2 |
|
|
--1.6 |
|
00 |
0.4 |
0.8 |
|
|
1.2 |
|
|
|
1.6 |
|||
|
|
|
|
|
|
Base-to-Emitter Voltage, VBE |
– |
V |
ITR03080 |
|
|
Base-to-Emitter Voltage, VBE |
– |
V |
|
|
ITR03081 |
No.1048-2/4