Sanyo 2SC3134 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High V
EBO
, AF Amp Applications
Ordering number:ENN1048C
2SA1252/2SC3134
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· High V
· Wide ASO and high durability against breakdown.
( ) : 2SA1252
Specifications
Absolute Maximum Ratings at Ta = 25˚C
.
EBO
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2018B
1
[2SA1252/2SC3134]
0.4
0.95
3
0.95
1.9
2.9
0.5
1.5
2
0.5
0.8
0.16
2.5
1.1
0 to 0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
06)–(V
05)–(V
51)–(V
051)–(Am
003)–(Am
002Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
V
OBC
OBE
EF
T
BC
V
BE
V
EC
V
EC
BC
I,V04)–(=
0=1.0)–(Aµ
E
I,V01)–(=
0=1.0)–(Aµ
C
I,V6)–(=
Am1)–(=*09*065
C
I,V6)–(=
Am1)–(=001zHM
C
zHM1=f,V6)–(=
nimpytxam
* : The 2SA1252/2SC3134 are classified as follows according to hFE at 1mA : Continued on next page.
Marking 2SA1252 : D
2SC3134 : H
hFE rank : 4, 5, 6, 7
knaR 4567
h
EF
081ot09072ot531004ot002006ot003
70502TN (KT)/71598HA (KT)/3187AT/3155MW, TS No.1048-1/4
sgnitaR
)5.3(
2.2
tinU
Fp
Continued from preceding page.
retemaraPlobmySsnoitidnoC
2SA1252/2SC3134
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
)tas(EC
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Am05)–(=
Am5)–(=5.0)–(V
B
I,Aµ01)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Aµ01)–(=
0=51)–(V
C
sgnitaR
nimpytxam
tinU
–mA
C
Collector Current, I
–mA
C
Collector Current, I
--
50
--
40
--
30
--
20
--
10
--
20
--
16
--
12
--
--
2SA1252
From top
--500µA
--450µA
--400µA
--350µA
--300µA
0
0
--70µA
8
4
IC -- V
--
0.2
--
0.4
CE
--
0.6
Collector-to-Emitter Voltage, VCE–V
IC -- V
CE
--60µA
--50µA
--40µA
--30µA
--20µA
--10µA
--250
--200
--150µA
--100µA
--50µA
--
0.8
2SA1252
µA
µA
=0
I
B
ITR03076
–mA
C
50
40
30
IC -- V
2SC3134
From top
500µA
450µA
400µA
350µA
300µA
CE
250
200µA
150µA
µA
100µA
20
50µA
Collector Current, I
10
=0
I
--
1.0
0
0 0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE–V
–mA
C
20
16
70
µA
60µA
IC -- V
50µA
12
8
40µA
CE
30µA
B
ITR03077
2SC3134
20µA
Collector Current, I
4
10µA
--
–mA
C
Collector Current, I
--
--
--
--
100
=0
I
0
0
--
10
Collector-to-Emitter Voltage, VCE–V
B
--
20
IC -- V
--
BE
30
--
40
ITR03078
--
50
2SA1252
0
01020304050
Collector-to-Emitter Voltage, VCE–V
100
IC -- V
VCE=--6V
80
Pulse
80
I
B
BE
=0
ITR03079
2SC3134
VCE=6V
Pulse
–mA
C
60
40
20
0
0
--
0.4
--
0.8
--
1.2
Base-to-Emitter Voltage, VBE–V
ITR03080
--
1.6
60
40
Collector Current, I
20
0
0 0.4 0.8 1.2 1.6
Base-to-Emitter Voltage, VBE–V
ITR03081
No.1048-2/4
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