Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
160V/700mA Switching Applications
Ordering number:ENN1032B
2SA1248/2SC3116
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
8.0
4.0
7.0
11.0
1.5
15.5
3.0
1.6
0.8
0.8
0.6
0.5
2.7
4.8
2.4
1.2
123
3.0
Uses
· Color TV sound output, converters, inverters.
Features
· High breakdown voltage.
· Large current capacity.
· Using MBIT process
( ) : 2SA1248
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloC
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
* : 2SA1248/2SC3116 are classified by follows according to hFE at 100mA. Continued on next page.
knaRRST
h
EF
002ot001082ot041004ot002
OBC
OEC
OBE
C
PC
P
c
Tc=25˚C
V
OBC
OBE
hEF1VECI,V5)–(=
hEF2VECI,V5)–(=
T
BC
V
BE
V
EC
Package Dimensions
unit:mm
2009B
[2SA1248/2SC3116]
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
sgnitaR
nimpytxam
I,V021)–(=
0=0.1)–(Aµ
E
I,V4)–(=
0=0.1)–(Aµ
C
C
C
I,V01)–(=
C
Am001)–(=*001*004
Am01)–(=09
Am05)–(=021zHM
081)–(V
061)–(V
6)–(V
7.0)–(A
5.1)–(A
1W
01W
˚C
˚C
tinU
70502TN (KT)/71598HA (KT)/5137KI/D222KI, TS No.1032-1/4
2SA1248/2SC3116
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtuptuOesaBnommoCC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
50Ω
B1
R
V
R
I
B2
B
+
100µF 470µF
+
PW=20µs
D.C.≤1%
INPUT
no
gts
f
bo
333Ω
V
BC
I
)tas(EC
C
I
)tas(EB
C
I
OEC)RB(
C
OEC)RB(
I
OBE)RB(
E
zHM1=f,V01)–(=
I,Am052)–(=
B
I,Am052)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=CI
EB
I,Aµ01)–(=
C
Am52)–(=
Am52)–(=58.0)–(2.1)–(V
0=081)–(V
=∞ 061)–(V
0=6)–(V
tiucriCtseTdeificepSeeS05)06(sn
tiucriCtseTdeificepSeeS
tiucriCtseTdeificepSeeS06)06(sn
sgnitaR
nimpytxam
8
)11(
21.0
)2.0–(
)009(
0001
tinU
Fp
4.0
V
)5.0–(
sn
100V
2SA1248
Pulse
–mA
C
Collector Current, I
--800
--700
--600
--500
--400
--300
--200
--100
From top
--200mA
--180mA
--160mA
--140mA
--5V
20IB1=--20IB2=IC=300mA
(For PNP, the polarity is reversed.)
IC -- V
CE
--120mA
--100mA
--80mA
--60mA
--40mA
--20mA
IB=0
0
0 --200 --400 --600 --800 --1000 200 400 600 800 10000
–mA
C
--800
--700
--600
--500
--400
Collector-to-Emitter Voltage, VCE–mV
IC -- V
CE
--5.0mA
--4.5mA
--4.0mA
--3.5mA
--3.0mA
--2.5mA
ITR03053
2SA1248
Pulse
--2.0mA
Collector Current, I
--300
--200
--100
0
0
--10--
Collector-to-Emitter Voltage, VCE–V
--1.5mA
--1.0mA
mA
--0.5
IB=0
--
40
--
30
20
--
60
--
50
--70--
ITR03055
80
–mA
C
Collector Current, I
800
700
600
500
400
300
200
100
1000
–mA
C
Collector Current, I
IC -- V
From top
100mA
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
0
Collector-to-Emitter Voltage, VCE–mV
IC -- V
800
600
400
200
0
10 20 30 40 50 60 70 800
Collector-to-Emitter Voltage, VCE–V
4.0mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5
IB=0
mA
CE
2SC3116
Pulse
IB=0
ITR03054
CE
2SC3116
Pulse
3.5mA
ITR03056
No.1032-2/4