Sanyo 2SC3114 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-V
EBO
, AF Amp Applications
Ordering number:ENN1047C
2SA1246/2SC3114
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Features
· High V
· Wide ASO and highly resistant to breakdown.
EBO
.
Package Dimensions
unit:mm
2003B
[2SA1246/2SC3114]
1 : Emitter
2 : Collector
( ) : 2SA1246
Specifications
3 : Base
SANYO : NP
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
06)–(V
05)–(V
51)–(V
051)–(Am
003)–(Am
004Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOesabnommoCC
egatloVnoitarutaSrettimE-ot-rotcelloCV
V
OBC
OBE
EF
T
bo
BC
V
BE
V
EC
V
EC
V
BC
I
)tas(EC
C
I,V04)–(=
0=1.0)–(Aµ
E
I,V01)–(=
0=1.0)–(Aµ
C
I,V6)–(=
Am1)–(=*001*065
C
I,V6)–(=
Am1)–(=001zHM
C
zHM1=f,V6)–(=0.3)2.4(Fp
I,Am05)–(=
Am5)–(=5.0)–(V
B
nimpytxam
* : The 2SA1246/2SC3114 are classified as follows according to hFE at 1mA. Continued on next page.
knaRRSTU
h
EF
002ot001082ot041004ot002065ot082
sgnitaR
tinU
70502TN (KT)/71598HA (KT)/3257AT/8253KI, TS (KOTO) No.1047-1/4
Continued from preceding page.
retemaraPlobmySsnoitidnoC
2SA1246/2SC3114
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Aµ01)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Aµ01)–(=
0=51)–(V
C
sgnitaR
nimpytxam
tinU
--50
IC -- V
2SA1246
CE
From above
--500
µ
A
--450
µ
A
--400
µ
A
--350
µ
A
--300
µ
A
0
0 --0.2 --0.4 --0.6 --0.8
–mA
C
Collector Current, I
--40
--30
--20
--10
Collector-to-Emitter Voltage, VCE–V
–mA
C
Collector Current, I
--20
--16
--12
IC -- V
A
A
µ
µ
--60
--70
--8
--4
--50
A
µ
--40
µ
--30
A
A
µ
--20
µ
--10
CE
A
A
µ
--200
--150
--100
--50
--250
µ
µ
IB=0
A
µ
A
A
A
µ
A
µ
2SA1246
ITR03038
--1.0
50
2SC3114
IC -- V
From above
500
µ
A
40
450
µ
A
400
µ
–mA
C
Collector Current, I
A
350
µ
A
30
300
µ
A
20
10
0
0 0.2 0.4 0.6 0.8 1.0
CE
200
150
100
µ
250
A
A
µ
µ
50
IB=0
µ
A
µ
Collector-to-Emitter Voltage, VCE–V
–mA
C
Collector Current, I
20
A
µ
70
16
12
8
60
IC -- V
A
µ
A
µ
50
A
µ
40
A
µ
30
20
4
10
CE
2SC3114
A
µ
A
µ
A
A
ITR03039
0
0 --10 --20 --30 --40
IB=0
Collector-to-Emitter Voltage, VCE–V
--100
--80
IC -- V
BE
–mA
C
--60
--40
Collector Current, I
--20
0
0 --0.4 --1.2--0.8 --1.6
Base-to-Emitter Voltage, VBE–V
ITR03040
2SA1246
VCE=--6V
Pulse
ITR03042
--50
0
01020304050
Collector-to-Emitter Voltage, VCE–V
100
IB=0
IC -- V
ITR03041
BE
2SC3114
VCE=6V
80
Pulse
–mA
C
60
40
20
Collector Current, I
0
Base-to-Emitter Voltage, VBE–V
1.20.8 1.60 0.4
ITR03043
No.1047-2/4
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