Sanyo 2SC3114 Specifications

Ordering number:ENN1047C

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1246/2SC3114

High-VEBO, AF Amp Applications

Features

· High V .

EBO

· Wide ASO and highly resistant to breakdown.

Package Dimensions

unit:mm

2003B

( ) : 2SA1246

Specifications

Absolute Maximum Ratings at Ta = 25˚C

[2SA1246/2SC3114]

	5.0			4.0
	4.0
				5.0
0.45
0.5
0.45		0.6	2.0	0.44
				14.0
1	2	3

1.31.3

1 : Emitter

2 : Collector

3 : Base

SANYO : NP

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		(–)60	V
Collector-to-Emitter Voltage	VCEO		(–)50	V
Emitter-to-Base Voltage	VEBO		(–)15	V
Collector Current	IC		(–)150	mA
Collector Current (Pulse)	ICP		(–)300	mA
Collector Dissipation	PC		400	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=(–)40V, IE=0

(–)0.1

µA

Emitter Cutoff Current

IEBO

VEB=(–)10V, IC=0

(–)0.1

µA

DC Current Gain

hFE

VCE=(–)6V, IC=(–)1mA

100*

560*

Gain-Bandwidth Product

fT

VCE=(–)6V, IC=(–)1mA

100

MHz

Common base Output Capacitance

Cob

VCB=(–)6V, f=1MHz

(4.2)3.0

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=(–)50mA, IB=(–)5mA

(–)0.5

V

* : The 2SA1246/2SC3114 are classified as follows according to hFE at 1mA.

Continued on next page.

Rank

R

S

T

U

hFE

100 to 200

140 to 280

200 to 400

280 to 560

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

70502TN (KT)/71598HA (KT)/3257AT/8253KI, TS (KOTO) No.1047-1/4

2SA1246/2SC3114

Continued from preceding page.

Parameter	Symbol		Conditions		Ratings		Unit
				min	typ	max
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=(–)10µA, IE=0		(–)60			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=(–)1mA, RBE=∞		(–)50			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=(–)10µA, IC=0		(–)15			V

	--50				IC -- VCE
			2SA1246
			From above										A
										250
			--500 A							--
	--40
mA			--450 A									A
			--400 A						--200
–
			--350 A						--150 A
C
	--30		--300 A
I
Current,
									--100 A
Collector	--20
										--50 A
	--10
	00										IB=0
			--0.2		--0.4		--0.6		--0.8						--1.0

Collector-to-Emitter Voltage, VCE – V ITR03038

	--20									IC -- VCE
				A		A
			70
					--
		--			60
							A
	--16
mA					50
					--
								A
–
							40
					--
C	--12
I
							30			A
Current,							--
									--
	--8									20		A
Collector
													A
	--4											--10
	0												IB=0
					--10					--20				--30
	0

2SA1246

--40 --50

Collector-to-Emitter Voltage, VCE

–

V ITR03040

--100

IC -- VBE

2SA1246

VCE=--6V

mA

--80

Pulse

–

C

--60

I

Current,

--40

Collector

--20

00

--0.4

--0.8

--1.2

--1.6

Base-to-Emitter Voltage, VBE

–

V

ITR03042

Collector Current, IC – mA

IC -- VCE

50

2SC3114 From above

40

500 A

450 A

400 A

350 A

30 300 A

20

10

	A
250
A
200
150	A
	A
100
50 A

		00																		IB=0
						0.2				0.4					0.6					0.8				1.0
							Collector-to-Emitter Voltage, VCE													–		V ITR03039
		20								IC -- VCE
						A																	2SC3114
					70
								A
mA		16						60
									A
–								50
C
I		12								40 A
Current,
										30 A
Collector		8
										20 A
		4
										10 A
		0											IB=0
			0			10				20					30					40				50
							Collector-to-Emitter Voltage, VCE													–		V		ITR03041
	100										IC -- VBE
																							2SC3114
																							VCE=6V
mA		80																					Pulse
–
C		60
I
Current,		40
Collector
		20
		0
			0			0.4				0.8					1.2									1.6
							Base-to-Emitter Voltage, VBE –													V				ITR03043

No.1047-2/4