Sanyo 2SC2911 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

PNP/NPN Epitaxial Planar Silicon Transistors

160V/140mA High-Voltage Switching
and AF 100W Predriver Applications

Ordering number:ENN779D

2SA1209/2SC2911

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

8.0

4.0

7.0

11.0

1.5

15.5

3.0

1.6

0.8

0.8

0.6

0.5

2.7

4.8

2.4

1.2

123

3.0

Features

· Adoption of FBET process.

· High breakdown voltage.

· Good linearity of hFE and small Cob.

· Fast switching speed.

( ) : 2SA1209

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCDh

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Continued on next page.

knaRRST

h

EF

002ot001082ot041004ot002

OBC
OEC
OBE

C

PC

C

Tc=25˚C

V

OBC
OBE
EF

T

bo

BC

V

BE

V

EC

V

EC

V

BC

Package Dimensions

unit:mm

2009B

[2SA1209/2SC2911]

1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126

sgnitaR

nimpytxam

I,V08)–(=

0=1.0)–(Aµ

E

I,V4)–(=

0=1.0)–(Aµ

C

I,V5)–(=

C

Am01)–(=*001*004

I,V01)–(=

C

Am01)–(=051zHM

zHM1=f,V01)–(=0.3)0.4(Fp

081)–(V

061)–(V

5)–(V

041)–(Am

002)–(Am
1W
01W

˚C
˚C

tinU

70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5

2SA1209/2SC2911

Continued from preceding page.

retemaraPlobmySsnoitidnoC

egatloVnoitarutaSrettimE-ot-rotcelloCV

emiTNO-nruTt

emiTllaFt

emiTegarotSt

Switching Test Circuit

I

B1

I

IN

3kΩ

50Ω

B2

R

B

5kΩ

+

1µF1µF

OUT

2kΩ

+

I

)tas(EC

C

no
f

gts

I,Am05)–(=

Am5)–(=

B

tiucriCtseTdeificepseeS1.0sµ
tiucriCtseTdeificepseeS1.0sµ
tiucriCtseTdeificepseeS5.1sµ

sgnitaR

nimpytxam

70.0
)41.0–(

tinU

3.0

V

)4.0–(

--140

--120

--100

–mA

C

Collector Current, I

--80

--60

--40

--20

--0.6mA

--2V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)

IC -- V

--0.5mA

--0.4mA

CE

20V

--0.3mA

--0.2mA

--0.1mA

2SA1209

140

120

100

–mA

C

Collector Current, I

IC -- V

CE

0.5mA

0.6mA

0.4mA

80

60

40

20

0.3mA

0.2

mA

IB=0

0

0 --10 --20 --30 --40 --50 --60 --70 0 10 20 30 40 50 60 70

--140

--120

Collector-to-Emitter Voltage, VCE–V

IC -- V

BE

ITR03021

2SA1209

140

120

0

Collector-to-Emitter Voltage, VCE–V

IC -- V

BE

2SC2911

0.1mA

IB=0

ITR03022

2SC2911

--100

–mA

C

Collector Current, I

--80

--60

--40

--20

100

–mA

C

80

60

40

Collector Current, I

20

0

--

0.20

Base-to-Emitter Voltage, VBE–V

--

0.4

--

0.6

--

0.8

ITR03023

--

1.0

0

Base-to-Emitter Voltage, VBE–V

0.4 0.6 0.8 1.00.20

ITR03024

No.779-2/5