Sanyo 2SC2911 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
160V/140mA High-Voltage Switching
and AF 100W Predriver Applications
Ordering number:ENN779D
2SA1209/2SC2911
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
8.0
4.0
7.0
11.0
1.5
15.5
3.0
1.6
0.8
0.8
0.6
0.5
2.7
4.8
2.4
1.2
123
3.0
Features
· Adoption of FBET process.
· High breakdown voltage.
· Good linearity of hFE and small Cob.
· Fast switching speed.
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Continued on next page.
knaRRST
h
EF
002ot001082ot041004ot002
OBC
OEC
OBE
C
PC
C
Tc=25˚C
V
OBC
OBE
EF
T
bo
BC
V
BE
V
EC
V
EC
V
BC
Package Dimensions
unit:mm
2009B
[2SA1209/2SC2911]
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
sgnitaR
nimpytxam
I,V08)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V5)–(=
C
Am01)–(=*001*004
I,V01)–(=
C
Am01)–(=051zHM
zHM1=f,V01)–(=0.3)0.4(Fp
081)–(V
061)–(V
5)–(V
041)–(Am
002)–(Am
1W
01W
˚C
˚C
tinU
70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5
2SA1209/2SC2911
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTllaFt
emiTegarotSt
Switching Test Circuit
I
B1
I
IN
3kΩ
50Ω
B2
R
B
5kΩ
+
1µF1µF
OUT
2kΩ
+
I
)tas(EC
C
no
f
gts
I,Am05)–(=
Am5)–(=
B
tiucriCtseTdeificepseeS1.0sµ
tiucriCtseTdeificepseeS1.0sµ
tiucriCtseTdeificepseeS5.1sµ
sgnitaR
nimpytxam
70.0
)41.0–(
tinU
3.0
V
)4.0–(
--140
--120
--100
–mA
C
Collector Current, I
--80
--60
--40
--20
--0.6mA
--2V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)
IC -- V
--0.5mA
--0.4mA
CE
20V
--0.3mA
--0.2mA
--0.1mA
2SA1209
140
120
100
–mA
C
Collector Current, I
IC -- V
CE
0.5mA
0.6mA
0.4mA
80
60
40
20
0.3mA
0.2
mA
IB=0
0
0 --10 --20 --30 --40 --50 --60 --70 0 10 20 30 40 50 60 70
--140
--120
Collector-to-Emitter Voltage, VCE–V
IC -- V
BE
ITR03021
2SA1209
140
120
0
Collector-to-Emitter Voltage, VCE–V
IC -- V
BE
2SC2911
0.1mA
IB=0
ITR03022
2SC2911
--100
–mA
C
Collector Current, I
--80
--60
--40
--20
100
–mA
C
80
60
40
Collector Current, I
20
0
--
0.20
Base-to-Emitter Voltage, VBE–V
--
0.4
--
0.6
--
0.8
ITR03023
--
1.0
0
Base-to-Emitter Voltage, VBE–V
0.4 0.6 0.8 1.00.20
ITR03024
No.779-2/5
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