Sanyo 2SC2911 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

PNP/NPN Epitaxial Planar Silicon Transistors

160V/140mA High-Voltage Switching
and AF 100W Predriver Applications

Ordering number:ENN779D

2SA1209/2SC2911

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

8.0

4.0

7.0

11.0

1.5

15.5

3.0

1.6

0.8

0.8

0.6

0.5

2.7

4.8

2.4

1.2

123

3.0

Features

· Adoption of FBET process.

· High breakdown voltage.

· Good linearity of hFE and small Cob.

· Fast switching speed.

( ) : 2SA1209

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCDh

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Continued on next page.

knaRRST

h

EF

002ot001082ot041004ot002

OBC
OEC
OBE

C

PC

C

Tc=25˚C

V

OBC
OBE
EF

T

bo

BC

V

BE

V

EC

V

EC

V

BC

Package Dimensions

unit:mm

2009B

[2SA1209/2SC2911]

1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126

sgnitaR

nimpytxam

I,V08)–(=

0=1.0)–(Aµ

E

I,V4)–(=

0=1.0)–(Aµ

C

I,V5)–(=

C

Am01)–(=*001*004

I,V01)–(=

C

Am01)–(=051zHM

zHM1=f,V01)–(=0.3)0.4(Fp

081)–(V

061)–(V

5)–(V

041)–(Am

002)–(Am
1W
01W

˚C
˚C

tinU

70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5

2SA1209/2SC2911

Continued from preceding page.

retemaraPlobmySsnoitidnoC

egatloVnoitarutaSrettimE-ot-rotcelloCV

emiTNO-nruTt

emiTllaFt

emiTegarotSt

Switching Test Circuit

I

B1

I

IN

3kΩ

50Ω

B2

R

B

5kΩ

+

1µF1µF

OUT

2kΩ

+

I

)tas(EC

C

no
f

gts

I,Am05)–(=

Am5)–(=

B

tiucriCtseTdeificepseeS1.0sµ
tiucriCtseTdeificepseeS1.0sµ
tiucriCtseTdeificepseeS5.1sµ

sgnitaR

nimpytxam

70.0
)41.0–(

tinU

3.0

V

)4.0–(

--140

--120

--100

–mA

C

Collector Current, I

--80

--60

--40

--20

--0.6mA

--2V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)

IC -- V

--0.5mA

--0.4mA

CE

20V

--0.3mA

--0.2mA

--0.1mA

2SA1209

140

120

100

–mA

C

Collector Current, I

IC -- V

CE

0.5mA

0.6mA

0.4mA

80

60

40

20

0.3mA

0.2

mA

IB=0

0

0 --10 --20 --30 --40 --50 --60 --70 0 10 20 30 40 50 60 70

--140

--120

Collector-to-Emitter Voltage, VCE–V

IC -- V

BE

ITR03021

2SA1209

140

120

0

Collector-to-Emitter Voltage, VCE–V

IC -- V

BE

2SC2911

0.1mA

IB=0

ITR03022

2SC2911

--100

–mA

C

Collector Current, I

--80

--60

--40

--20

100

–mA

C

80

60

40

Collector Current, I

20

0

--

0.20

Base-to-Emitter Voltage, VBE–V

--

0.4

--

0.6

--

0.8

ITR03023

--

1.0

0

Base-to-Emitter Voltage, VBE–V

0.4 0.6 0.8 1.00.20

ITR03024

No.779-2/5

1000

FE

2SA1209/2SC2911

hFE -- I

7
5

3
2

C

2SA1209

--5V

VCE=

1000

FE

7
5

3
2

hFE -- I

C

2SC2911
VCE=5V

100

Common Emitter DC Current Gain, h

10

– MHz

T

100

Gain-Bandwidth Product, f

10

100

100

7
5

3
2

7
5

3
2

Common Emitter DC Current Gain, h

57753257322

Collector Current, IC–mA

3

2

--10 --100--1.0

fT -- I

ITR03025

C

2SA1209
VCE=--10V

10

3

2

2SC2911
VCE=10V

57753257322

Collector Current, IC–mA

10 1001.0

fT -- I

ITR03026

C

– MHz

T

100

7

5

3

2

7

5

3

2

Gain-Bandwidth Product, f

100

10

7
5

3
2

573257322

Collector Current, IC–mA

10 1001.0

Cob -- V

ITR03028

CB

2SC2911
f=1MHz

573257322

Collector Current, IC–mA

7
5

3
2

--10 --100--1.0

Cob -- V

ITR03027

CB

2SA1209
f=1MHz

10

7
5

3

Output Capacitance, Cob – pF

2

1.0
23 57 75

Collector-to-Base Voltage, VCB-- V

2

--1.0
7

5

(sat) – V

3

CE

2

--0.1
7

5

Collector-to-Emitter

Saturation Voltage, V

3
2

57 57 75

--1.0

VCE(sat) -- I

22323

Collector Current, IC–mA

23

--10--1.0 --100

ITR03029

C

2SA1209
IC / IB=10

--10 --100

ITR03031

10

7
5

3

Output Capacitance, Cob – pF

2

1.0
23 57 75

Collector-to-Base Voltage, VCB-- V

1.0

7
5

3

(sat) – V

2

CE

0.1

7
5

Collector-to-Emitter

Saturation Voltage, V

3

2

57 57 75

1.0

VCE(sat) -- I

22323

Collector Current, IC–mA

23

101.0 100

ITR03030

C

2SC2911
IC / IB=10

10 100

ITR03032

No.779-3/5

2SA1209/2SC2911

--10
7

5

3

(sat) – V

BE

2

--1.0
7

5

Base-to-Emitter

Saturation Voltage, V

3

57

5
3

ICP=200mA

2

IC=140mA

100

–mA

7

C

5
3

2

10

7

Collector Current, I

5

2SA1209 / 2SC2911
DC Single pulse

3

(For PNP, minus sign is omitted.)

2

12

VBE(sat) -- I

--1.0 --10

Collector Current, IC–mA

7222335 75

C

A S O

1ms

1s

DC operation

723 5 723 5 23 5

10 100

Collector-to-Emitter Voltage, VCE–V

P

-- Tc

C

2SA1209 / 2SC2911

2SA1209
IC / IB=10

--100

ITR03033

ITR03035

10

7
5

3

(sat) – V

BE

2

1.0
7

5

Base-to-Emitter

Saturation Voltage, V

3

57

1.2

1.0

1.0 10

VBE(sat) -- I

Collector Current, IC–mA

7222335 75

P

-- Ta

C

–W

0.8

C

0.6

0.4

0.2

Collector Dissipation, P

0

0 20 40 60 80 100 120 160140

Ambient Temperature, Ta – ˚C

No heat sink

C

2SC2911
IC / IB=10

100

ITR03034

2SA1209 / 2SC2911

ITR03036

10

–W

8

C

6

4

2

Collector Dissipation, P

0

0 20 40 60 80 100 120 160140

Case Temperature, Tc – ˚C

ITR03037

No.779-4/5

2SA1209/2SC2911

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.

PS No.779-5/5