Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
AF 60W Predriver Applications
Ordering number:ENN778F
2SA1207/2SC2909
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Features
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of hFE and small Cob.
· Fast switching speed.
( ) : 2SA1207
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
* : The 2SA1207/2SC2909 are classified by 10mA hFE as follows : Continued on next page.
knaRRST
h
EF
002ot001082ot041004ot002
OBC
OEC
OBE
C
PC
C
V
OBC
OBE
EF
T
bo
BC
V
BE
V
EC
V
EC
V
BC
I
)tas(EC
C
Package Dimensions
unit:mm
2003B
[2SA1207/2SC2909]
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
sgnitaR
nimpytxam
I,V08)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V5)–(=
C
I,Am03)–(=
Am01)–(=*001*004
I,V01)–(=
C
B
Am01)–(=051zHM
zHM1=f,V01)–(=0.2)5.2(Fp
Am3)–(=
80.0
)41.0–(
081)–(V
061)–(V
5)–(V
07)–(Am
041)–(Am
006Wm
˚C
˚C
tinU
3.0
V
)4.0–(
70502TN (KT)/71598HA (KT)/4190MO/3187AT/2255MY, TS No.778-1/4
Page 2
2SA1207/2SC2909
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTNO-nruTt
emiTllaFt
emiTegarotSt
no
f
gts
Switching Time Test Circuit
I
3kΩ
50Ω
B1
I
B2
5kΩ
+
1µF1µF
IN
OUT
2kΩ
+
tiucriCtseTdeificepseeS1.0sµ
tiucriCtseTdeificepseeS2.0sµ
tiucriCtseTdeificepseeS0.1sµ
sgnitaR
nimpytxam
tinU
--2V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)
--60
--50
--0.3mA
–mA
C
Collector Current, I
--40
--30
--20
--10
--0.25mA
--0.2mA
--0.15mA
0
0 --10 --20 --30 --40 --50 --60
IC -- V
--0.1mA
20V
CE
--0.05mA
IB=0
Collector-to-Emitter Voltage, VCE–V
--80
IC -- V
BE
2SA1207
--70
VCE=
IC -- V
–mA
C
Collector Current, I
60
50
0.25mA
0.3mA
40
30
20
10
0.2mA
0.15mA
2SA1207 2SC2909
0.1
CE
mA
0.05mA
IB=0
0
0102030405060
ITR02989
--5V
80
70
Collector-to-Emitter Voltage, VCE–V
IC -- V
BE
2SC2909
VCE=5V
ITR02990
–mA
C
Collector Current, I
--60
--50
--40
--30
--20
--10
60
–mA
50
C
40
°C
25°C
25°C
Ta=75
0
--
--
0.4
--
0.20
Base-to-Emitter Voltage, VBE–V
0.6
--
--
0.8
--
1.0
--
1.2 0.4 0.6 0.8 1.00.20 1.2
ITR02991
30
20
Collector Current, I
10
0
Base-to-Emitter Voltage, VBE–V
°C
Ta=75
25°C
25°C
--
ITR02992
No.778-2/4
Page 3
1000
FE
100
DC Current Gain, h
2SA1207/2SC2909
hFE -- I
7
5
Ta=75
3
2
7
5
3
2
°C
--
25
°C
25°C
C
2SA1207
--5V
VCE=
5
3
2
FE
100
7
5
3
DC Current Gain, h
2
Ta=75
25
--
hFE -- I
°C
°C
C
°C
25
2SC2909
VCE=5V
10
– MHz
T
100
Gain-Bandwidth Product, f
10
10
– MHz
10
Collector Current, IC–mA
5
3
2
5775325732
10 1001.0
fT -- I
C
ITR02994
2SC2909
VCE=10V
5775325732
fT -- I
--10 --100--1.0
ITR02993
C
2SA1207
VCE=--10V
Collector Current, IC–mA
5
3
2
T
100
7
5
3
2
Collector Current, IC–mA
5757 2 3
Cob -- V
23 57
CB
--100--1.0 --10
ITR02995
2SA1207
7
5
3
f=1MHz
7
5
3
2
Gain-Bandwidth Product, f
10
Collector Current, IC–mA
10
7
5
3
5755773232
Cob -- V
10 1001.0
ITR02996
CB
2SC2909
f=1MHz
2
1.0
Output Capacitance, Cob – pF
7
5
23 57 75
Collector-to-Base Voltage, VCB-- V
5
3
2
--1000
(sat) – mV
7
CE
5
3
2
--100
7
Collector-to-Emitter
Saturation Voltage, V
5
3
57 57 75
--1.0
--10 --100
VCE(sat) -- I
25°C
°C
Ta=75
°C
--25
23 23
Collector Current, IC–mA
2
1.0
Output Capacitance, Cob – pF
7
1000
5
Collector-to-Base Voltage, VCB-- V
10 100
VCE(sat) -- I
7
5
3
23
C
23 23 57 75
ITR02997
C
2SA1207
IC / IB=10
(sat) – mV
2
CE
--10 --100
ITR02999
100
7
5
Collector-to-Emitter
Saturation Voltage, V
3
2
57 57 75
1.0
Ta=75
--25
23 23
Collector Current, IC–mA
25°C
°C
°C
10 100
ITR02998
2SC2909
IC / IB=10
ITR03000
No.778-3/4
Page 4
--10
2SA1207/2SC2909
VBE(sat) -- I
7
5
C
2SA1207
IC / IB=10
10
7
5
VBE(sat) -- I
C
2SC2909
IC / IB=10
3
(sat) – V
2
BE
--1.0
7
5
Base-to-Emitter
Saturation Voltage, V
3
2
57
--1.0 --10
3
2
ICP=140mA
100
IC=70mA
7
–mA
5
C
3
2
10
7
Collector Current, I
5
Single pulse Ta=25
3
(For PNP, minus sign is omitted.)
2
57 72325
Collector-to-Emitter Voltage, VCE–V
Ta=--25
Collector Current, IC–mA
10 100
°C
°C
75
722335 75
A S O
DC Operation
°C
25°C
ITR03001
2SA1207 / 2SC2909
1ms
10ms
100
m
s
ITR03003
--100
3
(sat) – V
BE
2
1.0
7
5
Base-to-Emitter
Saturation Voltage, V
3
57
700
600
500
–mW
C
400
300
200
100
Collector Dissipation, P
0
0 20 40 60 80 100 120 160140
Ta=--25
75
1.0 10
Collector Current, IC–mA
25°C
°C
°C
722335 75
P
-- Ta
C
Ambient Temperature, Ta – ˚C
100
ITR03002
2SA1207 / 2SC2909
ITR03004
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
PS No.778-4/4
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