Sanyo 2SC2909 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
AF 60W Predriver Applications
Ordering number:ENN778F
2SA1207/2SC2909
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Features
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of hFE and small Cob.
· Fast switching speed.
( ) : 2SA1207
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
* : The 2SA1207/2SC2909 are classified by 10mA hFE as follows : Continued on next page.
knaRRST
h
EF
002ot001082ot041004ot002
OBC
OEC
OBE
C
PC
C
V
OBC
OBE
EF
T
bo
BC
V
BE
V
EC
V
EC
V
BC
I
)tas(EC
C
Package Dimensions
unit:mm
2003B
[2SA1207/2SC2909]
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
sgnitaR
nimpytxam
I,V08)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V5)–(=
C
I,Am03)–(=
Am01)–(=*001*004
I,V01)–(=
C
B
Am01)–(=051zHM
zHM1=f,V01)–(=0.2)5.2(Fp
Am3)–(=
80.0
)41.0–(
081)–(V
061)–(V
5)–(V
07)–(Am
041)–(Am
006Wm
˚C
˚C
tinU
3.0
V
)4.0–(
70502TN (KT)/71598HA (KT)/4190MO/3187AT/2255MY, TS No.778-1/4
2SA1207/2SC2909
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTNO-nruTt
emiTllaFt
emiTegarotSt
no
f
gts
Switching Time Test Circuit
I
3kΩ
50Ω
B1
I
B2
5kΩ
+
1µF1µF
IN
OUT
2kΩ
+
tiucriCtseTdeificepseeS1.0sµ
tiucriCtseTdeificepseeS2.0sµ
tiucriCtseTdeificepseeS0.1sµ
sgnitaR
nimpytxam
tinU
--2V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)
--60
--50
--0.3mA
–mA
C
Collector Current, I
--40
--30
--20
--10
--0.25mA
--0.2mA
--0.15mA
0
0 --10 --20 --30 --40 --50 --60
IC -- V
--0.1mA
20V
CE
--0.05mA
IB=0
Collector-to-Emitter Voltage, VCE–V
--80
IC -- V
BE
2SA1207
--70
VCE=
IC -- V
–mA
C
Collector Current, I
60
50
0.25mA
0.3mA
40
30
20
10
0.2mA
0.15mA
2SA1207 2SC2909
0.1
CE
mA
0.05mA
IB=0
0
0102030405060
ITR02989
--5V
80
70
Collector-to-Emitter Voltage, VCE–V
IC -- V
BE
2SC2909
VCE=5V
ITR02990
–mA
C
Collector Current, I
--60
--50
--40
--30
--20
--10
60
–mA
50
C
40
°C
25°C
25°C
Ta=75
0
--
--
0.4
--
0.20
Base-to-Emitter Voltage, VBE–V
0.6
--
--
0.8
--
1.0
--
1.2 0.4 0.6 0.8 1.00.20 1.2
ITR02991
30
20
Collector Current, I
10
0
Base-to-Emitter Voltage, VBE–V
°C
Ta=75
25°C
25°C
--
ITR02992
No.778-2/4
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