Sanyo 2SC2812N Specifications
Ordering number : ENN7198
2SA1179N / 2SC2812N
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1179N / 2SC2812N
Low-Frequency General-Purpose
Amp Applications
Features
•
Miniature package facilitates miniaturization in end
products.
• High breakdown voltage.
Package Dimensions
unit : mm
2204
[2SA1179N / 2SC2812N]
0.42
3
12
0.95 0.95
1.9
2.92
0.550.55
1.3
0.4
2.4
0.97
0.131
‘
0.1
0
1 : Base
2 : Emitter
3 : Collector
SANYO : CPA
Specifications
( ) : 2SA1179N
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
B
C
(--)55 V
(--)50 V
(--)5 V
(--)150 mA
(--)300 mA
(--)30 mA
200 mW
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72602 TS IM TA-2636, 2637
No.7198-1/4
Electrical Characteristics at Ta=25°C
2SA1179N / 2SC2812N
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)6V , f=1MHz (4.0)3.0 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)50mA, IB=(--)5mA
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)50mA, IB=(--)5mA (--)1.0 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
CBO
EBO
FE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
VCB=(--)35V, IE=0 (--)0.1 µA
VEB=(--)4V, IC=0 (--)0.1 µA
VCE=(--)6V , IC=(--)1mA 200 400
2SC2812 : VCE=6V, IC=1mA 100 MHz
T
2SA1179 : VCE=--6V, IC=--10mA (180) MHz
=(--)10µA, IE=0 (--)55 V
=(--)1mA, RBE=∞ (--)50 V
=(--)10µA, IC=0 (--)5 V
Ratings
min typ max
(--0.15)0.1
(--)0.5 V
Marking : 2SA1179N M
: 2SC2812N L
hFE Rank : 6
Unit
--16
--12
-- mA
C
--8
--4
Collector Current, I
0
0
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE -- V
--240
--200
--160
-- mA
C
--120
--80
Collector Current, I
--40
--50µA
--45µA
IC -- V
--40µA
--35µA
IC -- V
--30µA
CE
--25µA
BE
°C
Ta=75
--20µA
25°C
°C
--25
2SA1179N
--15µA
--10µA
--5µA
IB=0
2SA1179N
VCE=
IT04195
--6V
IC -- V
CE
2SC2812N
-- mA
C
20
50µA
16
45µA
40µA
35µA
12
30µA
25µA
8
20µA
15µA
Collector Current, I
4
0
0 1020304050
Collector-to-Emitter Voltage, VCE -- V
240
IC -- V
10µA
BE
5µA
IB=0
IT04196
2SC2812N
VCE=6V
200
160
-- mA
C
120
°C
80
Collector Current, I
40
Ta=75
°C
°C
25
--25
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter V oltage, VBE -- V
IT04197
0
0 1.0 1.20.6 0.80.40.2
Base-to-Emitter V oltage, VBE -- V
IT04198
No.7198-2/4
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