Ordering number:513H
PNP/NPN Epitaxial Planar Silicon Transistor
2SB633/2SD613
85V/6A, AF 25 to 35W Output Applications
Features
· High breakdown voltage, V 85V, high current 6A.
CEO
· AF25 to 35W output.
( ) : 2SB633
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2010C
[2SB633/2SD613]
JEDEC : TO-220AB 1 : Base
EIAJ : SC-46 |
2 : Collector |
|
3 : Emitter |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)100 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)85 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)6 |
V |
Collector Current |
IC |
|
(–)6 |
A |
Collector Current (Pulse) |
ICP |
|
(–)10 |
A |
Collector Dissipation |
PC |
Tc=25˚C |
40 |
W |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)40V, IE=0 |
|
|
(–)0.1 |
mA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
|
|
(–)0.1 |
mA |
DC Current Gain |
hFE1 |
VCE=(–)5V, IC=(–)1A |
40* |
|
320* |
|
|
hFE2 |
VCE=(–)5V, IC=(–)3A |
20 |
|
|
|
Gain-Bandwidth Product |
fT |
VCE=(–)5V, IC=(–)1A |
|
15 |
|
MHz |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)4A, IB=(–)0.4A |
|
|
(–)2.0 |
V |
Base-to-Emitter Voltage |
VBE |
IE=(–)5A, IC=(–)1A |
|
|
(–)1.5 |
V |
Output Capacitance |
Cob |
VCB=(–)10V, f=1MHz |
|
(150) |
|
pF |
|
|
|
|
110 |
|
pF |
|
|
|
|
|
|
|
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/D251MH/4017KI/1115MW, TS/No.174, 8-2629 No.513–1/4
2SB633/2SD613
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)5mA, IE=0 |
(–)100 |
|
|
V |
Collector-to-Emitter Brakdown Voltage |
V(BR)CEO |
IC=(–)5mA, RBE=∞ |
(–)85 |
|
|
V |
|
V(BR)CEO |
IC=(–)50mA, RBE=∞ |
(–)85 |
|
|
V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)5mA, IC=0 |
(–)6 |
|
|
V |
Turn-ON Time |
ton |
See specified Test Circuit |
|
(0.16) |
|
µs |
|
|
|
|
0.28 |
|
µs |
|
|
|
|
|
|
|
Fall Time |
tf |
See specified Test Circuit |
|
(0.33) |
|
µs |
|
|
|
|
0.50 |
|
µs |
|
|
|
|
|
|
|
Storage Time |
tstg |
See specified Test Circuit |
|
(1.45) |
|
µs |
|
|
|
|
3.60 |
|
µs |
|
|
|
|
|
|
|
* : The 2SB633/2SD613 are classified by 1A hFE as follows :
40 C 80 |
60 D 120 |
100 E 200 |
160 F 320 |
|
|
|
|
Switching Time Test Circuit
No.513–2/4
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