Sanyo 2SB1396 Specifications

Ordering number:EN2911

PNP Epitaxial Planar Silicon Transistor

2SB1396

DC-DC Converter, Motor Driver Applications

Features

·Adoption of FBET, MBIT processes.

·Large current capacity.

·Low collector-to-emitter saturation voltage.

·Small size making it easy to provide high-density, small-sized hybrid ICs.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2038

[2SB1396]

E : Emitter

C : Collector

B : Base

SANYO : PCP

(Bottom view)

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		–15	V
Collector-to-Emitter Voltage	VCEO		–10	V
Emitter-to-Base Voltage	VEBO		–7	V
Collector Current	IC		–3	A
Collector Current (Pulse)	ICP		–5	A
Collector Dissipation	PC	Mounted on ceramic PCB (250mm2×0.8mm)	1.3	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol			Conditions					Ratings		Unit
								min	typ	max
Collector Cutoff Current	ICBO		VCB=–12V, IE=0							–100	nA
Emitter Cutoff Current	IEBO		VEB=–6V, IC=0							–100	nA
DC Current Gain	hFE1		VCE=–2V, IC=–0.5A					140*		560*
	hFE2		VCE=–2V, IC=–3A					70
Gain-Bandwidth Product	fT		VCE=–2V, IC=–0.3A						400		MHz
Output Capacitance	Cob		VCB=–10V, f=1MHz						26		pF
* : The 2SB1396 is classified by 0.5A hFE as follows :
		140	S 280	200 T 400	280	U 560
Marking : BO
hFE rank : S, T, U

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O1598HA (KT)/D168MO, TS No.2911–1/3

2SB1396

Parameter	Symbol		Conditions		Ratings		Unit
				min	typ	max
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=–1.5A, IB=–30mA			–220	–400	mV
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=–1.5A, IB=–30mA			–0.9	–1.2	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=–10µA, IE=0		–15			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=–1mA, RBE=∞		–10			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=–10µA, IC=0		–7			V

No.2911–2/3