Sanyo 2SB1396 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

PNP Epitaxial Planar Silicon Transistor

DC-DC Converter, Motor Driver Applications

Ordering number:EN2911

2SB1396

Features

· Adoption of FBET, MBIT processes.

· Large current capacity.

· Low collector-to-emitter saturation voltage.

· Small size making it easy to provide high-density,
small-sized hybrid ICs.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

* : The 2SB1396 is classified by 0.5A hFE as follows :
Marking : BO
hFE rank : S, T, U

OBC
OEC
OBE

C

PC

C

OBC
OBE

hEF1VECI,V2–=
hEF2VECI,V2–=

T

bo

Package Dimensions

unit:mm

2038

Mounted on ceramic PCB (250mm2×0.8mm)

V
V

V
V

I,V21–=

BC
BE

EC
BC

0=001–An

E

I,V6–=

0=001–An

C
C

A3–=

C

I,V2–=

C

082S041004T002065U082

A5.0–=

A3.0–=
zHM1=f,V01–=

[2SB1396]

E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)

sgnitaR

nimpytxam

*041*065

07

004zHM
62Fp

51–V
01–V
7–V
3–A
5–A

3.1W

˚C
˚C

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O1598HA (KT)/D168MO, TS No.2911–1/3

2SB1396

retemaraPlobmySsnoitidnoC

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

I

)tas(EC

C

I

)tas(EB

C

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

I,A5.1–=

Am03–=

B

I,A5.1–=

Am03–=9.0–2.1–V

B
I,Aµ01–=

0=51–V

E

R,Am1–=

=∞ 01–V

EB

I,Aµ01–=

0=7–V

C

sgnitaR

nimpytxam

022–004–Vm

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No.2911–2/3