Sanyo 2SB1395 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
PNP Epitaxial Planar Silicon Transistor
DC-DC Converter, Motor Driver Applications
Ordering number:EN2910
2SB1395
Features
· Adoption of FBET, MBIT processes.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SB1395 is classified by 0.5A hFE as follows :
082S041004T002065U082
C
PC
C
hEF)1(VECI,V2–= hEF)2(VECI,V2–=
T
Package Dimensions
unit:mm
2003A
[2SB1395]
JEDEC : T O-92 EIAJ : SC-43 SANYO: NP
OBC OEC OBE
V
OBC
V
OBE
V V
bo
I,V21–=
BC BE
EC BC
0=001–An
E
I,V6–=
0=001–An
C
A5.0–=
C
A3–=
C
I,V2–=
A3.0–=
C
zHM1=f,V01–=
B : Base C : Collector E : Emitter
sgnitaR
nimpytxam
*041*065
07
004zHM 62Fp
51–V 01–V 7–V 3–A 5–A
57.0W
˚C ˚C
tinU
O1598HA (KT)/D158MO, TS No.2910–1/3
2SB1395
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,A5.1–=
Am03–=
B
I,A5.1–=
Am03–=9.0–2.1–V
B I,Aµ01–=
0=51–V
E
R,Am1–=
= 01–V
EB
I,Aµ01–=
0=7–V
C
sgnitaR
nimpytxam
022–004–Vm
tinU
No.2910–2/3
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