SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Ordering number:EN2555A
2SB1302
Applications
· DC-DC converters, motor drivers, relay drivers, lamp
drivers.
Features
· Adoption of FBET, MBIT processes.
· Low collector-to-emitter saturation voltage.
· Large current capacity.
· Fast switching speed.
· Very small size making it easy to provide highdensity, small-sized hybrid ICs.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SB1302 is classified by 500mA hFE as follows :
Marking : BJ
hFE rank : R, S, T
OBC
OEC
OBE
C
PC
Mounted on ceramic board (250mm2×0.8mm)
C
V
OBC
V
OBE
hEF1VECI,V2–=
hEF2VECI,V2–=
V
T
V
bo
Package Dimensions
unit:mm
2038
I,V02–=
BC
BE
EC
BC
0=005–An
E
I,V4–=
0=005–An
C
C
C
I,V5–=
C
002R001082S041004T002
[2SB1302]
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
52–V
02–V
5–V
5–A
8–A
3.1W
˚C
˚C
sgnitaR
nimpytxam
Am005–=
A4–=
Am002–=
zHM1=f,V01–=
*001*004
06
023zHM
06Fp
tinU
O1598HA (KT)/D2680MO/4097TA, TS No.2555–1/4
2SB1302
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
I,A3–=
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
IC=1–R,Am
OEC)RB(
I
OBE)RB(
E
no
gts
f
Am06–=052–005–Vm
B
I,A3–=
Am06–=0.1–3.1–V
B
I,Aµ01–=
0=52–V
E
=∞ 02–V
EB
I,Aµ01–=
0=5–V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time Test Circuit
sgnitaR
nimpytxam
04sn
002sn
01sn
tinU
No.2555–2/4