2SD1825
Ordering number:EN2209C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB1223/2SD1825
Driver Applications
Applications
· Suitable for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators.
Features
·High DC current gain.
·Large current capacity and wide ASO.
·Micaless package facilitating mounting.
( ) : 2SB1223
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2041A
[2SB1223/2SD1825]
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)70 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)60 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)6 |
V |
Collector Current |
IC |
|
(–)4 |
A |
Collector Current (Pulse) |
ICP |
|
(–)6 |
A |
Collector Dissipation |
PC |
|
2.0 |
W |
|
|
Tc=25˚C |
20 |
W |
|
|
|
|
|
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)40V, IE=0 |
|
|
(–)0.1 |
mA |
Emitter Cutoff Current |
IEBO |
VEB=(–)5V, IC=0 |
|
|
(–)3.0 |
mA |
DC Current Gain |
hFE |
VCE=(–)2V, IC=(–)2A |
2000 |
5000 |
|
|
Gain-Bandwidth Product |
fT |
VCE=(–)5V, IC=(–)2A |
|
20 |
|
MHz |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)2A, IB=(–)4mA |
|
0.9 |
(–)1.5 |
V |
|
|
|
|
(–1.0) |
|
V |
|
|
|
|
|
|
|
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)2A, IB=(–)4mA |
|
|
(–)2.0 |
V |
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/80796TS (KOTO) 8-9896/2047KI, TS No.2209–1/4
2SB1223/2SD1825
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)5mA, IE=0 |
(–)70 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)50mA, RBE=∞ |
(–)60 |
|
|
V |
Turn-ON Time |
ton |
See specified Test Circuit |
|
0.6 |
|
µs |
|
|
|
|
(0.5) |
|
µs |
|
|
|
|
|
|
|
Storage Time |
tstg |
See specified Test Circuit |
|
2.7 |
|
µs |
|
|
|
|
(1.4) |
|
µs |
|
|
|
|
|
|
|
Fall Time |
tf |
See specified Test Circuit |
|
1.6 |
|
µs |
|
|
|
|
(1.2) |
|
µs |
|
|
|
|
|
|
|
Switching Time Test Circuit |
|
Electrical Connection |
|
|
|
|
No.2209–2/4
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