Ordering number:2069A
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PNP Epitaxial Planar Silicon Transistor |
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2SB1140 |
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20V/5A Switching Applications |
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Applications |
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Package Dimensions |
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· Strobes, power supplies, relay drivers, lamp drivers. |
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unit:mm |
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Features |
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2042A |
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[2SB1140] |
·Adoption of FBET, MBIT processes.
·Low saturation voltage.
·Large current cpacity.
·Short switching time.
B : Base
C : Collector
E : Emitter
Specifications |
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SANYO : TO-126ML |
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Absolute Maximum Ratings at Ta = 25˚C |
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Parameter |
Symbol |
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Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
VCBO |
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–25 |
V |
Collector-to-Emitter Voltage |
VCEO |
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–20 |
V |
Emitter-to-Base Voltage |
VEBO |
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–5 |
V |
Collector Current |
IC |
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–5 |
A |
Collector Current (Pulse) |
ICP |
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–8 |
A |
Base Current |
IB |
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–0.5 |
A |
Collector Dissipation |
PC |
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1.5 |
W |
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Tc=25˚C |
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10 |
W |
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Junction Temperature |
Tj |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C |
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Parameter |
Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
ICBO |
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VCB=–20V, IE=0 |
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–500 |
nA |
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Emitter Cutoff Current |
IEBO |
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VEB=–4V, IC=0 |
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–500 |
nA |
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DC Current Gain |
hFE1 |
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VCE=–2V, IC=–500mA |
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100* |
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400* |
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hFE2 |
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VCE=–2V, IC=–4A |
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60 |
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Gain-Bandwidth Product |
fT |
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VCE=–5V, IC=–200mA |
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320 |
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MHz |
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Output Capacitance |
Cob |
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VCB=–10V, f=1MHz |
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60 |
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pF |
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* : The 2SB1140 is classified by 500mA hFE as follows : |
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100 R 200 |
140 S 280 |
200 |
T 400 |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4017KI/D176TA No.2069–1/4
2SB1140
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=–3A, IB=–60mA |
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–250 |
–500 |
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Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=–3A, IB=–60mA |
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–1.0 |
–1.3 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
–25 |
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V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
–20 |
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V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
–5 |
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V |
Turn-ON Time |
ton |
See specified Test Circuti. |
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40 |
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ns |
Storage Time |
tstg |
See specified Test Circuit. |
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200 |
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Fall Time |
tf |
See specified Test Circuit. |
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10 |
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ns |
Switching Time Test Circuit
No.2069–2/4