Sanyo 2SB1140 Specifications

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Ordering number:2069A

 

 

 

 

 

PNP Epitaxial Planar Silicon Transistor

 

 

 

 

 

2SB1140

 

 

 

 

 

20V/5A Switching Applications

 

 

 

 

 

 

 

 

Applications

 

Package Dimensions

· Strobes, power supplies, relay drivers, lamp drivers.

 

unit:mm

Features

 

2042A

 

 

 

 

[2SB1140]

·Adoption of FBET, MBIT processes.

·Low saturation voltage.

·Large current cpacity.

·Short switching time.

B : Base

C : Collector

E : Emitter

Specifications

 

 

 

 

 

 

 

 

 

 

SANYO : TO-126ML

Absolute Maximum Ratings at Ta = 25˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

 

 

 

Conditions

 

 

 

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-to-Base Voltage

VCBO

 

 

 

 

 

 

 

 

 

 

 

–25

V

Collector-to-Emitter Voltage

VCEO

 

 

 

 

 

 

 

 

 

 

 

–20

V

Emitter-to-Base Voltage

VEBO

 

 

 

 

 

 

 

 

 

 

 

–5

V

Collector Current

IC

 

 

 

 

 

 

 

 

 

 

 

–5

A

Collector Current (Pulse)

ICP

 

 

 

 

 

 

 

 

 

 

 

–8

A

Base Current

IB

 

 

 

 

 

 

 

 

 

 

 

–0.5

A

Collector Dissipation

PC

 

 

 

 

 

 

 

 

 

 

 

1.5

W

 

 

 

Tc=25˚C

 

 

 

 

 

 

10

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Junction Temperature

Tj

 

 

 

 

 

 

 

 

 

 

 

150

˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Storage Temperature

Tstg

 

 

 

 

 

 

 

 

 

–55 to +150

˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Electrical Characteristics at Ta = 25˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

 

 

 

Conditions

 

 

 

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

min

typ

 

max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

ICBO

 

VCB=–20V, IE=0

 

 

 

 

 

 

–500

nA

Emitter Cutoff Current

IEBO

 

VEB=–4V, IC=0

 

 

 

 

 

 

–500

nA

DC Current Gain

hFE1

 

VCE=–2V, IC=–500mA

 

 

100*

 

 

400*

 

 

hFE2

 

VCE=–2V, IC=–4A

 

 

60

 

 

 

 

Gain-Bandwidth Product

fT

 

VCE=–5V, IC=–200mA

 

 

 

 

320

 

 

MHz

Output Capacitance

Cob

 

VCB=–10V, f=1MHz

 

 

 

 

60

 

 

pF

* : The 2SB1140 is classified by 500mA hFE as follows :

 

 

 

 

 

 

 

 

 

 

 

 

 

100 R 200

140 S 280

200

T 400

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92098HA (KT)/4017KI/D176TA No.2069–1/4

Sanyo 2SB1140 Specifications

2SB1140

Parameter

Symbol

Conditions

 

Ratings

 

Unit

 

 

 

 

 

 

min

typ

max

 

 

 

 

 

 

 

 

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=–3A, IB=–60mA

 

–250

–500

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=–3A, IB=–60mA

 

–1.0

–1.3

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=(–)10µA, IE=0

–25

 

 

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=(–)1mA, RBE=

–20

 

 

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=(–)10µA, IC=0

–5

 

 

V

Turn-ON Time

ton

See specified Test Circuti.

 

40

 

ns

Storage Time

tstg

See specified Test Circuit.

 

200

 

ns

Fall Time

tf

See specified Test Circuit.

 

10

 

ns

Switching Time Test Circuit

No.2069–2/4

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