Sanyo 2SB1131 Specifications

Ordering number:2420B

PNP Epitaxial Planar Silicon Transistor

2SB1131

Strobe, High-Current Switching Applications

Applications

· Strobes, power supplies, relay drivers, lamp drivers.

Features

· Adoption of FBET, MBIT processes.

· Low saturation voltage.

· Large current capacity.

· Fast switching time.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

* : The 2SB1131 is classified by 500mA hFE as follows :

002R001082S041004T002

OBC
OEC
OBE

C

PC

C

OBC
OBE

hEF1VECI,V2–=
hEF2VECI,V2–=

T

)tas(EC
)tas(EB

Package Dimensions

unit:mm

2006A

[2SB1131]

EIAJ : SC-51 B : Base
SANYO : MP C : Collector

E : Emitter

52–V
02–V
5–V
5–A
8–A
1W

˚C
˚C

sgnitaR

nimpytxam
V
V

V
I

C

I

C

I,V02–=

BC
BE

EC

0=005–An

E

I,V4–=

0=005–An

C
C
C

I,V5–=

C

I,A3–=

B

I,A3–=

B

Am005–=*001*004

A4–=

Am002–=023zHM
Am06–=
Am06–=

06

052–005–Vm

0.1–3.1–V

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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92098HA (KT)/8270MH/5217TA, TS No.2420–1/4

2SB1131

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ecnaticapaCtuptuOC

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

emiTNO-nruTt

emiTegarotSt

emiTllaFt

V

bo

no
gts

f

BC

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

zHM1=f,V01–=06Fp

I,Aµ01)–(=

0=52–V

E

R,Am1)–(=

=∞ 02–V

EB

I,Aµ01)–(=

0=5–V

C

Switching Time T est Circuit

sgnitaR

nimpytxam

.itucriCtseTdeificepseeS
.tiucriCtseTdeificepseeS
.tiucriCtseTdeificepseeS

04sn
002sn
01sn

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No.2420–2/4