Sanyo 2SB1127 Specifications

Ordering number:2452

PNP Epitaxial Planar Silicon Transistor

2SB1127

20V/5A Switching Applications

Applications

· Strobe, power supplies, relay drivers, lamp drivers.

Features

· Adoption of FBET, MBIT processes.

· Low saturation voltage.

· Large current capacity.

· Fast switching speed.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

B

C

Tc=25˚C

Package Dimensions

unit:mm

2009A

[2SB1127]

JEDEC : TO-126 B : Base

C : Collector
E : Emitter

52–V
02–V
5–V
5–A
8–A

5.0–A
1W
01W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

hEF1VECI,V2–=
hEF2VECI,V2–=

V

OBC

V

OBE

V

T

I

)tas(EC

C

I

)tas(EB

C

I,V02–=

BC
BE

EC

0=005–An

E

I,V4–=

0=005–An

C
C
C

I,V5–=

C

I,A3–=

B

I,A3–=

B

Am005–=*001*004

A4–=

Am002–=023zHM
Am06–=
Am06–=

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

nimpytxam

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92098HA (KT)/4157TA, TS No.2452–1/4

sgnitaR

06

052–005–Vm

0.1–3.1–V

tinU

2SB1127

retemaraPlobmySsnoitidnoC

ecnaticapaCtuptuOC

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

emiTNO-nruTt

emiTegarotSt

emiTllaFt

V

bo

no
gts

f

BC

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

zHM1=f,V01–=06Fp

I,Aµ01)–(=

0=52–V

E

R,Am1)–(=

=∞ 02–V

EB

I,Aµ01)–(=

0=5–V

C

* : The 2SB1127 is classified by 500mA hFE as follows :

002R001082S041004T002

Switching Time T est Circuit

sgnitaR

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.itucriCtseTdeificepseeS
.tiucriCtseTdeificepseeS
.tiucriCtseTdeificepseeS

04sn
002sn
01sn

tinU

No.2452–2/4