SANYO 2SC536N, 2SA608N Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Low-Frequency
General-Purpose Amplifier Applications
Ordering number:ENN6324
2SA608N/2SC536N
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Capable of being used in the low frequency to high
frequency range.
Features
· Large current capacity and wide ASO.
( ) : 2SA608N
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2164
[2SA608N/2SC536N]
4.5
3.7
0.45
0.5
1.27
0.45 0.44
1.4max
0.6
123
2.5 2.5
4.0max
13.7
3.5
4.5
14.0
1 : Emitter
2 : Collector
3 : Base
SANYO : NPA-WA
06)05–(V
05)–(V
6)–(V
051)–(Am
004)–(Am
005Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
hEF1VECI,V6)–(=
hEF2VECI,V6)–(=
V
OBC
OBE
BC
V
BE
I,V04)–(=
0=1.0)–(Aµ
E
I,V5)–(=
0=1.0)–(Aµ
C
Am1)–(=*061*065
C
C
Am1.0)–(=07
* The 2SA608N/2SC536N are classified by 1mA hFE as follow
knaRFG
h
EF
023ot061065ot082
10700TS (KOTO) TA-2543 No.6324–1/4
sgnitaR
nimpytxam
Continued on next page.
tinU
Continued on preceding page.
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
-- V
C
–mA
--16
--12
C
--8
--4
Collector Current, I
0
0 --10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE–V
I
--240
--200
C
--50
µA
--45
-- V
CE
µA
--40µA
--35µA
--30µA
--25
BE
2SA608N/2SC536N
V
µA
--20
--15µA
--10µA
T
EC
EB
2SA608N
µA
--5µA
2SA608N
VCE=--6V
EC
BC
)tas(I
C
)tas(I
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
IB=0
IT00496
sgnitaR
nimpytxam
I,V6)–(=
C
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am01)–(=002zHM
zHM1=f,V6)–(=
I,Am001)–(=
B
I,Am001)–(=
B
EB
Am01)–(=3.0)–(V
Am01)–(=0.1)–(V
0=06)–(V
=∞ 05)–(V
0=6)–(V
I
-- V
20
C
CE
50µA
45µA
40µA
35
µA
30µA
–mA
C
16
12
0.3Fp
)5.4(Fp
2SC536N
tinU
25µA
8
20µA
15µA
4
Collector Current, I
0
01020304050
Collector-to-Emitter Voltage, VCE–V
240
I
C
-- V
10µA
5µA
BE
IB=0
IT00497
2SC536N
VCE=6V
200
–mA
--160
C
--120
--80
Collector Current, I
--40
0
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
Ta=75°C
Base-to-Emitter Voltage, VBE–V
h
-- I
1000
FE
DC Current Gain, h
100
FE
7
5
3
2
7
5
3
2
Ta=75°C
--25°C
C
25°C
–mA
160
C
120
-- I
°C
Ta=75
C
25°C
°C
°C
25
--25
IT00499
2SC536N
VCE=6V
80
°C
°C
25
--25
IT00498
2SA608N
VCE=--6V
Collector Current, I
40
0
0 0.2 0.4 0.6 0.8 1.21.0
1000
7
5
3
FE
2
100
7
5
DC Current Gain, h
3
2
Base-to-Emitter Voltage, VBE–V
h
FE
Ta=75°C
--25°C
10
325
--0.1
73257 3257 3257
Collector Current, IC–mA
--10 --100
--1000--1.0
IT00500
10
0.1
325
73257 3257 3257
Collector Current, IC–mA
10 100
IT00501
10001.0
No.6324–2/4
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