
Ordering number : ENN7495
2SA2098 / 2SC5887
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2098 / 2SC5887
High-Current Switching Applications
Applications
•
Relay drivers, lamp drivers, motor drivers.
Package Dimensions
unit : mm
2041A
Features
•
Adoption of MBIT processes.
•
Large current capacitance.
•
Low collector-to-emitter saturation voltage.
•
High-speed switching.
Specifications
( ) : 2SA2098
3.2
18.1
5.6
2.55
2.55
[2SA2098 / 2SC5887]
10.0
3.5
7.2
1.6
1.2
0.75
1
23
2.55
2.4
2.55
4.5
2.8
16.0
2.4
0.7
14.0
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
B
C
Tc=25°C30W
(--50)60 V
(--)50 V
(--)6 V
(--)15 A
(--)20 A
(--)3 A
2W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
CBO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
FE
Ratings
min typ max
VCB=(--)40V, IE=0 (--)10 µA
VEB=(--)4V, IC=0 (--)10 µA
VCE=(--)2V, IC=(--)1A 180 (400)560
VCE=(--)10V, IC=(--)1A (200)300 MHz
T
22004 TS IM TA-3725, 3726
Unit
Continued on next page.
No.7495-1/5

2SA2098 / 2SC5887
Continued from preceding page.
Parameter Symbol Conditions
Output Capacitance Cob VCB=(--)10V, f=1MHz (200)100 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)7A, IB=(--)350mA
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)7A, IB=(--)350mA (--)0.94 (--)1.4 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time td(on) See specified Test Circuit. (80)50 ns
Storage Time t
Fall Time t
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
stg
f
=(--)100µA, IE=0 (--50)60 V
=(--)1mA, RBE=∞ (--)50 V
=(--)100µA, IC=0 (--)6 V
See specified Test Circuit.
See specified Test Circuit. (30)40 ns
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
B1
I
B2
OUTPUT
Ratings
min typ max
(--200)160 (--500)400
(400)700
Unit
mV
ns
INPUT
50Ω
V
R
R
B
+
100µF 470µF
IC=20IB1= --20IB2=5A
(
For PNP, minus sign is omitted.
I
--15
2SA2098
--14
--13
--12
--11
-- A
--10
C
--9
--8
--7
--6
--5
--4
Collector Current, I
--3
--2
--1
0
0 --1.0 --2.0 --3.0 --4.0 --5.0--0.5 --1.5 --2.5 --3.5 --4.5
--80mA
--90mA
--100mA
C -- VCE
)
--70mA
Collector-to-Emitter Voltage, VCE -- V
I
--16
--14
2SA2098
VCE= --2V
C -- VBE
+
VCC=20VVBE= --5V
--60mA
--50mA
--40mA
R
L
I
15
2SC5887
14
13
12
11
-- A
100mA
10
C
--30mA
--20mA
--10mA
IB=0
IT06113 IT06114
9
8
7
6
5
4
Collector Current, I
3
2
1
0
0 1.0 2.0 3.0 4.0 5.00.5 1.5 2.5 3.5 4.5
90mA
Collector-to-Emitter Voltage, VCE -- V
16
2SC5887
VCE=2V
14
C -- VCE
80mA
70mA
I
C -- VBE
60mA
50mA
40mA
30mA
20mA
10mA
IB=0
--12
-- A
C
--10
--8
--6
--4
Collector Current, I
--2
0
--0.2 --0.6 --1.00 --0.4 --0.8 --1.2
25°C
--25°C
Ta=75°C
Base-to-Emitter V oltage, VBE -- V
12
-- A
C
10
8
6
4
Collector Current, I
2
0
IT06115 IT06116
0.2 0.6 1.00 0.4 0.8 1.2
Base-to-Emitter V oltage, VBE -- V
Ta=75°C
25°C
--25°C
No.7495-2/5