Ordering number : ENN6914
2SA2043 / 2SC5709
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2043 / 2SC5709
DC / DC Converter Applications
Applications |
Package Dimensions |
• Relay drivers, lamp drivers, motor drivers, strobes. |
unit : mm |
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2045B |
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Features |
[2SA2043 / 2SC5709] |
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• |
Adoption of FBET and MBIT processes. |
6.5 |
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1.5 |
2.3 |
5.0 |
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• |
Large current capacitance. |
4 |
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0.5 |
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• |
Low collector-to-emitter saturation voltage. |
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• |
High-speed switching. |
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5.5 |
7.0 |
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High allowable power dissipation. |
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• |
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0.85 |
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0.7 |
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1.2 |
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0.8 |
1.6 |
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7.5 |
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0.6 |
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0.5 |
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1 : Base |
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1 |
2 |
3 |
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2 : Collector |
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3 : Emitter |
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4 : Collector |
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2.3 |
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2.3 |
SANYO : TP |
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unit : mm |
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2044B |
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6.5
5.0
4
[2SA2043 / 2SC5709]
1.5 |
2.3 |
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0.5 |
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5.5 |
7.0 |
0.85
1 2
0.6
3
0.8
0.5
2.5
1.2
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
2.3 |
2.3 |
SANYO : TP-FA |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-3248 No.6914-1/5
2SA2043 / 2SC5709
Specifications
( ) : 2SA2043
Absolute Maximum Ratings at Ta=25°C
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
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|
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Collector-to-Base Voltage |
VCBO |
|
(--)15 |
V |
|
Collector-to-Emitter Voltage |
VCEO |
|
(--)15 |
V |
|
Emitter-to-Base Voltage |
VEBO |
|
(--)5 |
V |
|
Collector Current |
IC |
|
(--)10 |
A |
|
Collector Current (Pulse) |
ICP |
|
(--)13 |
A |
|
Base Current |
IB |
|
(--)1.2 |
A |
|
Collector Dissipation |
PC |
|
1 |
W |
|
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Tc=25°C |
15 |
W |
|||
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Junction Temperature |
Tj |
|
150 |
°C |
|
Storage Temperature |
Tstg |
|
--55 to +150 |
°C |
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Electrical Characteristics at Ta=25°C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
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|
|
|
min |
typ |
max |
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Collector Cutoff Current |
ICBO |
VCB=(--)12V, IE=0 |
|
|
(--)0.1 |
mA |
Emitter Cutoff Current |
IEBO |
VEB=(--)4V, IC=0 |
|
|
(--)0.1 |
mA |
DC Current Gain |
hFE |
VCE=(--)2V, IC=(--)500mA |
200 |
|
560 |
|
Gain-Bandwidth Product |
fT |
VCE=(--)2V, IC=(--)500mA |
|
(220)280 |
|
MHz |
Output Capacitance |
Cob |
VCB=(--)10V, f=1MHz |
|
(90)50 |
|
pF |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(--)3A, IB=(--)60mA |
|
(--110)120 |
(--170)180 |
mV |
IC=(--)4.5A, IB=(--)90mA |
|
(--160)180 |
(--240)280 |
mV |
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Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(--)3A, IB=(--)60mA |
|
(--)0.85 |
(--)1.2 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(--)10mA, IE=0 |
(--)15 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(--)1mA, RBE=¥ |
(--)15 |
|
|
V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(--)10mA, IC=0 |
(--)5 |
|
|
V |
Turn-On Time |
ton |
See specified test circuit. |
|
30 |
|
ns |
Storage Time |
tstg |
See specified test circuit. |
|
(120)180 |
|
ns |
Fall Time |
tf |
See specified test circuit. |
|
(14)25 |
|
ns |
Swicthing Time Test Circuit
PW=20µs
D.C.≤ 1%
INPUT
VR
50Ω
IB1
OUTPUT
IB2
RB |
RL |
|
+ |
+ |
100µF |
470µF |
VBE= --5V |
VCC=5V |
IC=20IB1= --20IB2=3A |
|
For PNP, the polarity is reversed. |
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No.6914-2/5
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