SANYO 2SA2043 Datasheet

Ordering number : ENN6914

2SA2043 / 2SC5709

PNP / NPN Epitaxial Planar Silicon Transistors

2SA2043 / 2SC5709

DC / DC Converter Applications

Applications

•

Relay drivers, lamp drivers, motor drivers, strobes.

Features

• Adoption of FBET and MBIT processes.

•

Large current capacitance.

• Low collector-to-emitter saturation voltage.

• High-speed switching.

• High allowable power dissipation.

Package Dimensions

unit : mm

2045B

[2SA2043 / 2SC5709]

6.5

unit : mm

2044B

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

6.5

5.0

4

1.5

5.5

0.8

1.6

[2SA2043 / 2SC5709]

1.55.5

7.0

7.5

2.3

2.3

0.5

1.2

0.5

1 : Base
2 : Collector
3 : Emitter
4 : Collector

SANYO : TP

0.5

7.0

2.5

0.5

1.2
0 to 0.2

1.2

1 : Base
2 : Collector
3 : Emitter
4 : Collector

SANYO : TP-FA

0.85

12

0.6

2.3 2.3

3

0.8

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52101 TS IM TA-3248

No.6914-1/5

2SA2043 / 2SC5709

Specifications

( ) : 2SA2043
Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

B

C

Tc=25°C15W

Electrical Characteristics at Ta=25°C

(--)15 V
(--)15 V

(--)5 V
(--)10 A
(--)13 A

(--)1.2 A

1W

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (90)50 pF

Collector-to-Emitter Saturation Voltage VCE(sat)
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)3A, IB=(--)60mA (--)0.85 (--)1.2 V

Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-On Time t
Storage Time t
Fall Time t

CBO
EBO

FE

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

VCB=(--)12V, IE=0 (--)0.1 µA
VEB=(--)4V, IC=0 (--)0.1 µA
VCE=(--)2V, IC=(--)500mA 200 560
VCE=(--)2V, IC=(--)500mA (220)280 MHz

T

IC=(--)3A, IB=(--)60mA
IC=(--)4.5A, IB=(--)90mA

=(--)10µA, IE=0 (--)15 V
=(--)1mA, RBE=∞ (--)15 V

=(--)10µA, IC=0 (--)5 V
See specified test circuit.
See specified test circuit.
See specified test circuit.

f

min typ max

Ratings

(--110)120 (--170)180
(--160)180 (--240)280

30

(120)180

(14)25

Swicthing Time Test Circuit

I

V

R

B1

I

B2

R

B

+

100µF 470µF

+50Ω

OUTPUT

R

L

PW=20µs
D.C.≤1%

INPUT

Unit

mV
mV

ns
ns
ns

IC=20IB1= --20IB2=3A
For PNP, the polarity is reversed.

VCC=5VVBE= --5V

No.6914-2/5