SANYO 2SA2037 Datasheet
Ordering number : ENN6587
2SA2037 / 2SC5694
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2037 / 2SC5694
DC / DC Converter Applications
Applications
•
Relay drivers, lamp drivers, motor drivers and
printer drivers.
Features
• Adoption of MBIT process.
•
Large current capacity.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• High allowable power dissipation.
Specifications
( ):2SA2037
Absolute Maximum Ratings at T a=25°C
Package Dimensions
unit : mm
2042B
1.6
0.8
0.8
0.75
2.4
1.0
1
8.0
2
[2SA2037 / 2SC5694]
4.0
1.0
1.4
3.0
7.5
1.5
3.0
3
1.7
4.8
11.0
15.5
3.3
0.7
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 ° C
Storage T emperature T stg −55 to +150 °C
CBO
CEO
EBO
C
CP
B
C
Tc=25°C10W
(−50)60 V
(−)50 V
(−)6 V
(−)7 A
(−)10 A
(−)1.2 A
1.2 W
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82200 TS IM TA-2916
No.6587-1/5
Electrical Characteristics at Ta=25°C
2SA2037 / 2SC5694
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (50)28 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)2.5A, IB=(--)125mA (--150)130 (--300)260 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2.5A, IB=(--)125mA (--)0.85 (--)1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-On Time t
Storage Time t
Fall Time t
CBO
EBO
FE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
VCB=(--)40V, IE=0 (--)0.1 µA
VEB=(--)4V, IC=0 (--)0.1 µA
VCE=(--)2V, IC=(--)1A 150 300
VCE=(--)10V, IC=(--)500mA (290)330 MHz
T
=(--)10µA, IE=0 (--50)60 V
=(--)1mA, RBE=∞ (--)50 V
=(--)10µA, IC=0 (--)6 V
See specified test circuit. 30 ns
See specified test circuit. (250)300 ns
See specified test circuit. 15 ns
f
min typ max
Ratings
Swicthing Time Test Circuit
I
V
R
B1
I
B2
R
B
++
100µF 470µF
OUTPUT
R
L
PW=20µs
D.C.≤1%
INPUT
50Ω
Unit
10IB1= --10IB2=IC=2A
For PNP, the polarity is reversed.
--7
From top
--200mA
--6
--180mA
--160mA
--5
--140mA
-- A
C
--4
--3
I
C
-- V
CE
--100mA
--120mA
VCC=20VVBE= --5V
--80mA
--60mA
--40mA
--20mA
I
-- V
7
From left
200mA
6
180mA
160mA
5
-- A
C
100mA
140mA
C
4
3
CE
80mA
120mA
60mA
40mA
20mA
--2
Collector Current, I
--1
0
0 --0.4 --0.8 --1.2 --1.6 --2.0
Collector-to-Emitter Voltage, V
CE
--10mA
--5mA
-- V
IB=0
IT02345
2
Collector Current, I
1
0
0 0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, V
CE
10mA
5mA
IB=0
-- V
IT02346
No.6587-2/5
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