SANYO 2SC5669, 2SA2031 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6586
2SA2031 / 2SC5669
230V / 15A, AF100W Output Applications
Features
•
Large current capacitance.
• Wide ASO and high durability against breakdown.
• Adoption of MBIT process.
Specifications
Note*( ) : 2SA2031
Absolute Maximum Ratings at T a=25°C
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
2SA2031 / 2SC5669
Package Dimensions
unit : mm
2022A
[2SA2031 / 2SC5669]
15.6
14.0
2.6
1.6
1.0
1
0.6
5.45
3.2
3.5
1.2
15.0
1.3
2.0
3
2
20.0 20.0
4.8
2.0
0.6
1 : Base
2 : Collector
1.4
5.45
3 : Emitter
SANYO : TO-3PB
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg −55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C 140 W
(−)250 V
(−)230 V
(−)6 V
(−)15 A
(−)30 A
2.5 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
CBO
EBO
hFE(1) VCE=(--)5V, IC=(--)1A 60 160
hFE(2) VCE=(--)5V, IC=(--)7.5A 35
VCB=(--)250V, IE=0 (--)0.1 mA
VEB=(--)4V, IC=0 (--)0.1 mA
Ratings
min typ max
Continued on next page.
Unit
61500 TS IM TA-2927
No.6586-1/4
2SA2031 / 2SC5669
Continued from preceding page.
Parameter Symbol Conditions
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (400)200 pF
Base-to-Emitter Voltage V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)7.5A, IB=(--)0.75A (--0.3)0.2 (--)2.0 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-On Time t
Storage Time t
Fall Time t
BE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
VCE=(--)5V, IC=(--)1A (10)15 MHz
T
VCE=(--)5V, IC=(--)7.5A 1.5 V
=(--)5mA, IE=0 (--)250 V
=(--)50mA, RBE=∞ (--)230 V
=(--)5mA, IC=0 (--)6 V
See specified test circuit.
See specified test circuit.
See specified test circuit.
f
Ratings
min typ max
(0.45)0.56
(1.75)3.3
(0.25)0.4
Swicthing Time Test Circuit
Unit
µs
µs
µs
PW=20µs
D.C.≤1%
INPUT
50Ω
10IB1= --10IB2=IC=7.5A
For PNP, the polarity is reversed.
--16
2SA2031
--14
--12
-- A
C
--10
--8
V
R
IC -- V
--500mA
I
B1
R
B
I
B2
+
100µF 470µF
CE
--400mA
OUTPUT
RL=
6.67Ω
+
VCC=50VVBE= --2V
--300mA
--200mA
--100mA
--6
--4
Collector Current, I
--2
0 0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Collector-to-Emitter Voltage, VCE -- V
IC -- V
--16
2SA2031
VCE= --5V
--14
BE
--40mA
--20mA
IB=0
IT02058
IC -- V
16
2SC5669
14
12
500mA
-- A
C
10
8
6
4
Collector Current, I
2
400mA
CE
300mA
200mA
100mA
40mA
20mA
IB=0
012345678910
Collector-to-Emitter Voltage, VCE -- V
IC -- V
16
14
2SC5669
VCE=5V
BE
IT02059
--12
-- A
C
--10
--8
--6
--4
Collector Current, I
--2
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Ta=120°C
25°C
--40°C
Base-to-Emitter V oltage, VBE -- V
IT02060
12
-- A
C
10
8
6
4
Collector Current, I
25°C
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Ta=120°C
--40°C
Base-to-Emitter V oltage, VBE -- V
IT02061
No.6586-2/4
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