SANYO 2SA2025 Datasheet

Ordering number:ENN6404

				PNP Epitaxial Planar Silicon Transistor
				2SA2025
				DC/DC Converter Applications
Applications				Package Dimensions
· Relay drivers, lamp drivers, motor drivers, strobes.				unit:mm

Features	2033A
				[2SA2025]
· Adoption of MBIT processes.		4.0			2.2
· Large current capacitance.				3.0
· Low collector-to-emitter saturation voltage.
	0.4			1.8
· High-speed switching.
	0.5
· Ultrasmall-sized package permitting applied sets to				0.6
				15.0
be made small and slim.	0.4
· High allowable power dissipation.					0.4
	1	2	3		1 : Emitter
	1.3			1.3
	0.7			0.7	2 : Collector
					3 : Base
		3.0
Specifications					SANYO : SPA
		3.8nom

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		–15	V
Collector-to-Emitter Voltage	VCEO		–12	V
Emitter-to-Base Voltage	VEBO		–5	V
Collector Current	IC		–3	A
Collector Current (Pulse)	ICP		–5	A
Base Current	IB		–600	mA
Collector Dissipation	PC		0.55	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=–12V, IE=0			–0.1	µA
Emitter Cutoff Current	IEBO	VEB=–4V, IC=0			–0.1	µA
DC Current Gain	hFE	VCE=–2V, IC=–500mA	200		560
Gain-Bandwidth Product	fT	VCE=–2V, IC=–500mA		280		MHz
Output Capacitance	Cob	VCB=–10V, f=1MHz		36		pF
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=–1.5A, IB=–30mA		–110	–165	mV
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=–1.5A, IB=–30mA		–0.85	–1.2	V

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

21000TS (KOTO) TA-2707 No.6404–1/4

2SA2025

Continued on preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=–10µA, IE=0	–15			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=–1mA, RBE=∞	–12			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=–10µA, IC=0	–5			V
Turn-ON Time	ton	See specified Test Circuit		30		ns
Storage Time	tstg	See specified Test Circuit		90		ns
Fall Time	tf	See specified Test Circuit		10		ns

Switching Time Test Circuit

		PW=20µs				IB1
		D.C.≤		1%		IB2
		INPUT					OUTPUT
					VR	1kΩ	RL
		50Ω				+	+
						220µF	470µF
					VBE=5V		VCC=--5V
					--20IB1= 20IB2= IC=--1.5A
	--2.0					IC -- VCE
							--14mA
	--1.8							--12mA
			16mA
A	--1.6								--10mA		A
		--
–	--1.4									--8mA	–
C											C
I	--1.2										I
Current,											Current,
	--1.0									--6mA
Collector	--0.8									--4mA	Collector
	--0.6
	--0.4									--2mA
	--0.2
	0									IB=0
	0			--0.2		--0.4	--0.6	--0.8		--1.0
			Collector-to-Emitter Voltage, VCE					–	V	IT01709
	--3.5					IC -- VBE
									VCE=--2V
	--3.0
A
–	--2.5										FE
C											h
Current,CollectorI	--2.0										Gain,CurrentDC
	--1.5
	--1.0
	--0.5
	0
	0		--0.2		--0.4	--0.6	--0.8		--1.0	--1.2

IC -- VCE

	--200
		.8mA
	--180	--0
		.7mA
		--0
	--160
		--0.6mA
	--140
		.5mA
	--120	--0

--100																			--0.4mA
																			--0.3mA
--80
--60																			--0.2mA
--40
																			--0.1mA
--20
0																				IB=0
0		--1						--2			--3				--4				--5
			Collector-to-Emitter Voltage, VCE												–		V			IT01710
1000								hFE			-- IC
7																	VCE=--2V
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
--0.01		2 3 5 7 --0.1						2 3			5 7 --1.0				2		3		5 7 --10

Base-to-Emitter Voltage, VBE – V

IT01711

Collector Current, IC – A

IT01712

No.6404–2/4