SANYO 2SA2025 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

PNP Epitaxial Planar Silicon Transistor

DC/DC Converter Applications

Ordering number:ENN6404

2SA2025

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.0

0.4

0.5

0.4

0.6

15.0

3.0

1.8

123

2.2

0.4

1.3

1.3

3.0

3.8nom

0.7

0.7

Applications

· Relay drivers, lamp drivers, motor drivers, strobes.

Features

· Adoption of MBIT processes.

· Large current capacitance.

· Low collector-to-emitter saturation voltage.

· High-speed switching.

· Ultrasmall-sized package permitting applied sets to
be made small and slim.

· High allowable power dissipation.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

B

C

Package Dimensions

unit:mm

2033A

[2SA2025]

1 : Emitter
2 : Collector
3 : Base
SANYO : SPA

51–V
21–V
5–V
3–A
5–A
006–Am

55.0W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCDh

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOboCV

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

EC
EB

EF

T

OBC
OBE

)tas(ICI,A5.1–=

V
V
V
V

)tas(ICI,A5.1–=

I,V21–=

BC
BE
EC
EC
BC

0=1.0–Aµ

E

I,V4–=

0=1.0–Aµ

C

I,V2–=

C

I,V2–=

C

B
B

Am005–=002065
Am005–=082zHM

zHM1=f,V01–=

Am03–=011–561–Vm
Am03–=58.0–2.1–V

21000TS (KOTO) TA-2707 No.6404–1/4

sgnitaR

nimpytxam

63Fp

Continued on next page.

tinU

2SA2025

Continued on preceding page.

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egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

emiTNO-nruTt

emiTegarotSt

emiTllaFt

Switching Time Test Circuit

I

V

R

B1

I

B2

1kΩ

+

220µF 470µF

+

OUTPUT

PW=20µs
D.C.≤1%

INPUT

50Ω

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E
no
gts

f

R

L

I,Aµ01–=

0=51–V

E

R,Am1–=

=∞ 21–V

EB

I,Aµ01–=

0=5–V

C

tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS

sgnitaR

nimpytxam

03sn
09
01sn

tinU

sn

VBE=5V

--20IB1= 20IB2= IC=--1.5A

I

--2.0

--1.8

--1.6

–A

--1.4

C

--1.2

--1.0

--0.8

--0.6

Collector Current, I

--0.4

--0.2

--3.5

--3.0

–A

--2.5

--16mA

0

0 --0.2 --0.4 --0.6 --0.8 --1.0

Collector-to-Emitter Voltage, VCE–V

C

I

C

-- V

-- V

VCC=--5V

CE

--14mA

BE

--12mA

C

--2.0

--1.5

--1.0

Collector Current, I

--0.5

0

0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0

Base-to-Emitter Voltage, VBE–V

--10mA

--8mA

--6mA

--4mA

--2mA

IB=0

IT01709

VCE=--2V

IT01711

I

-- V

--200

--180

--160

–A

--140

C

--120

--100

--80

--60

Collector Current, I

--40

--20
0

0 --1 --2 --3 --4 --5

C

CE

--0.8mA

Collector-to-Emitter Voltage, VCE–V

h

-- I

1000

FE

DC Current Gain, h

100

1.0

10

--0.01

7
5

3
2

7
5

3
2

7
5

3
2

23 57

Collector Current, IC–A

FE

--0.1

C

2 3 57 2 3 57

--1.0 --10

--0.7mA

--0.6mA

--0.5mA

--0.4mA

--0.3mA

--0.2mA

--0.1mA
IB=0

IT01710

VCE=--2V

IT01712

No.6404–2/4