SANYO 2SC5610, 2SA2022 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6367
2SA2022/2SC5610
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· High allowable power dissipation.
Specifications
( ) : 2SA2022
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
OBC
OEC
OBE
C
PC
B
C
OBC
OBE
EF
T
Tc=25˚C
V
BC
V
BE
V
EC
V
EC
BC
Package Dimensions
unit:mm
2041A
[2SA2022/2SC5610]
10.0
3.2
18.1
5.6
1
2.55
2.55
I,V04)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V2)–(=
A1)–(=051003
C
I,V01)–(=
C
Am005)–(=
zHM1=f,V01)–(=
3.5
1.6
1.2
0.75
23
2.55
2.55
4.5
2.8
7.2
16.0
2.4
0.7
14.0
1 : Base
2 : Collector
2.4
3 : Emitter
SANYO : TO220ML
nimpytxam
Continued on next page.
sgnitaR
)092(zHM
033zHM
82)05(Fp
06)05–(V
05)–(V
6)–(V
7)–(A
01)–(A
2.1)–(A
2W
81W
˚C
˚C
tinU
21000TS (KOTO) TA-2470 No.6367–1/5
2SA2022/2SC5610
Continued on preceding page.
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
INPUT
50Ω
B1
(For PNP, the polarity is reversed.)
I
B2
R
B
V
R
+
100µF
+
470µF
OUTPUT
R
L
EC
EB
no
gts
f
)tas(ICI,A5.2)–(=
)tas(ICI,A5.2)–(=
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
B
B
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am521)–(=
Am521)–(=58.0)–(2.1)–(V
0=
=∞ 05)–(V
EB
0=6)–(V
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)051–()003–(Vm
031062Vm
)05–(V
06V
03sn
)052(
003
51sn
tinU
sn
sn
VBE=--5V
10IB1= --10IB2= IC=2A
--7
2SA2022
--6
--160mA
–A
--5
--180mA
C
--4
--3
--200mA
--2
Collector Current, I
--1
0
0 --0.4 --0.8 --1.2 --1.6 --2.0
--7
2SA2022
VCE=--2V
--6
–A
--5
--120mA
--140mA
Collector-to-Emitter Voltage, VCE–V
VCC=20V
I
-- V
C
--100mA
I
C
-- V
CE
BE
C
--4
--80mA
--60mA
40mA
--
--20mA
--10mA
--5mA
IB=0
IT01345
I
-- V
7
2SC5610
C
120mA
6
180mA
–A
5
C
Collector Current, I
200mA
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0
140mA
160mA
CE
100mA
Collector-to-Emitter Voltage, VCE–V
I
-- V
–A
7
2SC5610
VCE=2V
6
5
C
BE
C
4
80mA
60mA
40mA
20mA
10mA
5mA
IB=0
IT01353
--3
--2
Collector Current, I
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
Ta=75°C
Base-to-Emitter Voltage, VBE–V
3
Ta=75°C
°C
°C
25
--25
IT01354
°C
°C
25
--25
IT01346
2
Collector Current, I
1
0
0 0.2 0.4 0.6 0.8 1.21.0
Base-to-Emitter Voltage, VBE–V
No.6367–2/5
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