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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6309A
2SA2016/2SC5569
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit:mm
2163
Features
· Adoption of FBET and MBIT processes.
· High current capacitance.
[2SA2016/2SC5569]
4.5
1.6
1.5
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package facilitales miniaturization in end
products.
· High allowable power dissipation.
Specifications
( ) : 2SA2016
0.5
0.4
1.5
3.0
0.75
2.5
4.25max
1.0
123
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
Mounted on a ceramic board (250mm
C
Tc=25˚C
2
×0.8mm)
08)05–(V
05)–(V
6)–(V
7)–(A
01)–(A
2.1)–(A
3.1W
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
V
OBC
OBE
EF
T
BC
V
BE
V
EC
V
EC
BC
I,V04)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V2)–(=
C
I,V01)–(=
C
Am005)–(=002065
Am005)–(=
zHM1=f,V01)–(=
nimpytxam
Marking : 2SA2016 : AW 2SC5569 : FF Continued on next page.
sgnitaR
)092(zHM
033zHM
82)05(Fp
tinU
52501TS KT TA-3259 No.6309–1/5
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2SA2016/2SC5569
Continued on preceding page.
retemaraPlobmySsnoitidnoC
I
no
gts
f
C
)tas(
I
C
)tas(ICI,A2)–(=
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
EC
EB
Switching Time Test Circuit
I
I
V
R
100µF 470µF
B1
B2
R
OUTPUT
B
+
R
L
+
PW=20µs
D.C.≤1%
INPUT
50Ω
I,A5.3)–(=
B
I,A2)–(=
B
B
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am571)–(=
Am04)–(=
Am04)–(=38.0)–(2.1)–(V
0=
=∞ 05)–(V
EB
0=6)–(V
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)032–()093–(Vm
061042Vm
)042–()004–(Vm
011071Vm
)05–(V
08V
03)04(sn
)522(
024
52sn
tinU
sn
sn
--7
--6
2SA2016
VBE=--5V
20IB1= --20IB2= IC=2.5A
(For PNP, the polarity is reversed.)
I
C
--70mA
-- V
--90mA
--80mA
VCC=25V
CE
--60mA
–A
--5
C
--4
--3
--2
Collector Current, I
--1
0
0 --0.4 --0.8 --1.2 --1.6 --2.0
--8
--7
--6
–A
C
--5
--100mA
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
--50mA
--40mA
--30mA
--20mA
--10mA
IB=0
IT00206
2SA2016
VCE=--2V
7
6
–A
5
C
4
3
2
Collector Current, I
1
0
8
7
6
–A
C
5
I
-- V
C
90mA
80mA
100mA
2SC5569
0
0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
CE
70mA
60mA
50mA
40mA
30mA
20mA
10mA
IB=0
IT00207
BE
2SC5569
VCE=2V
--4
--3
--2
Collector Current, I
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2
Base-to-Emitter Voltage, VBE–V
°C
Ta=75
25
°C
°C
--25
IT00208
4
3
2
Collector Current, I
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE–V
°C
Ta=75
25
°C
°C
--25
IT00209
No.6309–2/5