Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6308
2SA2015/2SC5568
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit:mm
2163
Features
· Adoption of MBIT processes.
· Large current capacitance.
[2SA2015/2SC5568]
4.5
1.6
1.5
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall-sized package permitting applied sets to
be made small and slim.
· High allowable power dissipation.
Specifications
( ) : 2SA2015
0.5
0.4
1.5
3.0
0.75
2.5
4.25max
1.0
123
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
Mounted on a ceramic board (250mm
C
Tc=25˚C
2
×0.8mm)
04)03–(V
03)–(V
6)–(V
8)–(A
21)–(A
2.1)–(A
3.1W
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
V
OBC
OBE
EF
T
BC
V
BE
V
EC
V
EC
BC
I,V03)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V2)–(=
C
I,V01)–(=
C
Am005)–(=002065
Am005)–(=
zHM1=f,V01)–(=
nimpytxam
Marking : 2SA2015 : AV 2SC5568 : FE Continued on next page.
sgnitaR
)092(zHM
023zHM
04)25(Fp
tinU
21400TS (KOTO) TA-2522 No.6308–1/5
2SA2015/2SC5568
Continued on preceding page.
retemaraPlobmySsnoitidnoC
I
no
gts
f
C
)tas(
I
C
)tas(ICI,A5.2)–(=
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
EC
EB
Switching Time Test Circuit
I
I
V
R
100µF 470µF
B1
B2
OUTPUT
R
B
+
R
L
+
PW=20µs
D.C.≤1%
INPUT
50Ω
I,A4)–(=
B
I,A5.2)–(=
R,Am1)–(=
Am002)–(=
B
B
I,Aµ01)–(=
I,Aµ01)–(=
Am05)–(=
Am05)–(=58.0)–(2.1)–(V
0=
E
=∞ 03)–(V
EB
0=6)–(V
C
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)002–()043–(Vm
081072Vm
)071–()092–(Vm
031591Vm
)03–(V
04V
03sn
)091(
023
51sn
tinU
sn
sn
--8
--7
--6
–A
C
--5
--4
--3
--2
Collector Current, I
--1
--8
--7
--6
–A
C
--5
--4
--3
2SA2015
0
VBE=--5V
20IB1= --20IB2= IC=2.5A
(For PNP, the polarity is reversed.)
I
C
-- V
VCC=12V
CE
--90mA
--80mA
--70mA
--60mA
--100mA
--50mA
--40mA
--30mA
--20mA
--10mA
IB=0
--0.40 --0.8 --1.2 --1.6 --2.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
IT00188
2SA2015
VCE=--2V
25°C
8
7
6
–A
C
5
4
3
2
Collector Current, I
1
0
8
7
6
–A
C
5
4
3
I
-- V
90mA
C
70mA
CE
60mA
80mA
100mA
2SC5568
0.40 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
50mA
40mA
30mA
20mA
10mA
IB=0
IT00189
2SC5568
VCE=2V
25°C
--2
Collector Current, I
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2
Base-to-Emitter Voltage, VBE–V
°C
Ta=75
--25°C
IT00190
2
Collector Current, I
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE–V
°C
Ta=75
°C
--25
IT00191
No.6308–2/5