SANYO 2SC5567, 2SA2014 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6321
2SA2014/2SC5567
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit:mm
2163
Features
· Adoption of MBIT processes.
· Large current capacitance.
[2SA2014/2SC5567]
4.5
1.6
1.5
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall-sized package permitting applied sets to
be made small and slim.
· High allowable power dissipation.
Specifications
( ) : 2SA2014
0.5
0.4
1.5
3.0
0.75
2.5
4.25max
1.0
123
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
Mounted on a ceramic board (250mm
C
Tc=25˚C
2
×0.8mm)
51)–(V
51)–(V
5)–(V
9)–(A
21)–(A
2.1)–(A
3.1W
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
V
OBC
OBE
EF
T
BC
V
BE
V
EC
V
EC
BC
I,V21)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V2)–(=
C
I,V2)–(=
C
Am005)–(=002065
Am005)–(=
zHM1=f,V01)–(=
nimpytxam
Marking : 2SA2014 : AU 2SC5567 : FD Continued on next page.
sgnitaR
)022(zHM
082zHM
05)09(Fp
tinU
21000TS (KOTO) TA-2598 No.6321–1/5
2SA2014/2SC5567
Continued on preceding page.
retemaraPlobmySsnoitidnoC
I
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
EC
EB
no
gts
f
)tas(
I
)tas(ICI,A3)–(=
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
Switching Time Test Circuit
(For PNP, the polarity is reversed.)
I
PW=20µs
D.C.≤1%
INPUT
50Ω
B1
I
B2
R
B
V
R
100µF 470µF
VBE=--5V
20IB1= --20IB2= IC=3A
+
+
VCC=5V
OUTPUT
R
L
I,A3)–(=
C
C
C
C
E
B
B
Am06)–(=
I,A5.4)–(=
B
I,Aµ01)–(=
R,Am1)–(=
I,Aµ01)–(=
Am09)–(=
Am06)–(=58.0)–(2.1)–(V
0=51)–(V
E
=∞ 51)–(V
EB
0=5)–(V
C
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)011–()071–(Vm
021081Vm
)061–()042–(Vm
081082Vm
03sn
)021(
081
52)41(sn
tinU
sn
sn
--9
--8
--7
C
2SA2014
CE
--90mA
I
-- V
–A
--6
C
--5
--4
--3
Collector Current, I
--2
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5
Collector-to-Emitter Voltage, VCE–V
--9
--8
--7
–A
--6
C
--5
--4
--100mA
I
C
-- V
BE
25°C
--80mA
--70mA
--60mA
--50mA
--40mA
--30mA
--20mA
--10mA
IB=0
IT00170
2SA2014
VCE=--2V
9
2SC5567
8
7
C
90mA
CE
80mA
I
-- V
–A
6
C
5
4
3
Collector Current, I
2
1
0
0 0.1 0.2 0.3 0.4 0.5
Collector-to-Emitter Voltage, VCE–V
9
8
7
–A
6
C
5
4
100mA
I
C
-- V
BE
25°C
70mA
60mA
50mA
40mA
30mA
20mA
10mA
IB=0
IT00171
2SC5567
VCE=2V
--3
Collector Current, I
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2
Base-to-Emitter Voltage, VBE–V
Ta=75°C
--25
3
Collector Current, I
°C
IT00172
2
1
0
0 0.2 0.4 0.6 0.8 1.41.0 1.2
Base-to-Emitter Voltage, VBE–V
°C
Ta=75
°C
--25
IT00173
No.6321–2/5
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