Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6306
2SA2012/2SC5565
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· Ultrasmall-sized package permitting applied sets to
be made small and slim.
· High allowable power dissipation.
Specifications
( ) : 2SA2012
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
Marking : 2SA2012 : AS 2SC5565 : FB
OBC
OEC
OBE
C
PC
B
C
OBC
OBE
EF
T
Package Dimensions
unit:mm
2038A
0.4
Mounted on a ceramic board (250mm
Tc=25˚C
V
BC
V
BE
V
EC
V
EC
BC
I,V03)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V2)–(=
C
I,V01)–(=
C
Am005)–(=002065
Am005)–(=
zHM1=f,V01)–(=
[2SA2012/2SC5565]
4.5
1.6
0.5
2
3
1.5
0.75
2
×0.8mm)
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
sgnitaR
nimpytxam
)053(zHM
024zHM
02)03(Fp
Continued on next page.
04)03–(V
03)–(V
5)–(V
5)–(A
8)–(A
006)–(Am
3.1W
5.3W
˚C
˚C
tinU
21400TS (KOTO) TA-2520 No.6306–1/5
2SA2012/2SC5565
Continued on preceding page.
retemaraPlobmySsnoitidnoC
I
no
gts
f
C
)tas(
I
C
)tas(ICI,A5.1)–(=
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
EC
EB
Switching Time Test Circuit
I
I
V
R
100µF 470µF
B1
B2
OUTPUT
R
B
+
24Ω
+
PW=20µs
D.C.≤1%
INPUT
50Ω
I,A5.1)–(=
B
I,A5.2)–(=
B
B
I,Aµ01)–(=
R,Am1)–(=
I,Aµ01)–(=
Am03)–(=
Am521)–(=071)–(062)–(Vm
Am03)–(=38.0)–(2.1)–(V
0=
E
=∞ 03)–(V
EB
0=5)–(V
C
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)041–()012–(Vm
521091Vm
)03–(V
04V
03)05(sn
)072(
003
51)52(sn
tinU
sn
sn
--5
--4
2SA2012
--90mA
VBE=--5V
20IB1= --20IB2= IC=500mA
(For PNP, the polarity is reversed.)
I
C
--100mA
-- V
VCC=12V
CE
–A
C
--3
--2
Collector Current, I
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
°C
Ta=75
BE
25°C
°C
--25
--5.0
--4.5
--4.0
–A
--3.5
C
--3.0
--2.5
--2.0
--1.5
Collector Current, I
--1.0
--0.5
0
0 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2
Base-to-Emitter Voltage, VBE–V
--80mA
--70mA
--60mA
--50mA
--40mA
--30mA
--20mA
--10mA
IB=0
IT00134
2SA2012
VCE=--2V
IT00136
5
2SC5565
4
90mA
C
100mA
CE
I
-- V
–A
C
3
2
Collector Current, I
1
0
0
5.0
4.5
4.0
–A
3.5
C
3.0
2.5
2.0
1.5
Collector Current, I
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
25°C
°C
°C
Ta=75
--25
Base-to-Emitter Voltage, VBE–V
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
IB=0
IT00135
2SC5565
VCE=2V
IT00137
No.6306–2/5