Ordering number:ENN5613
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1973/2SC5310
DC/DC Converter Applications
Features |
Package Dimensions |
·Adoption of FBET, MBIT processes.
·Large current capacitance.
·Low collector-to-emitter saturation voltage.
·High-speed switching.
·Ultrasmall package facilitates miniaturization in end products.
Specifications
( ) : 2SA1973
Absolute Maximum Ratings at Ta = 25˚C
unit:mm
2018B
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[2SA1973/2SC5310] |
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0.4 |
3 |
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0.5 |
0.16 |
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1.5 |
2.5 |
0 to 0.1 |
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1 |
0.95 |
0.95 |
2 |
0.5 |
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1.9 |
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2.9 |
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1 : Base |
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0.8 |
1.1 |
2 : Emitter |
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3 : Collector |
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SANYO : CP
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
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Collector-to-Base Voltage |
VCBO |
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(–)30 |
V |
Collector-to-Emitter Voltage |
VCEO |
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(–)25 |
V |
Emitter-to-Base Voltage |
VEBO |
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(–)6 |
V |
Collector Current |
IC |
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(–)1 |
A |
Collector Current (Pulse) |
ICP |
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(–)3 |
A |
Base Current |
IB |
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(–)200 |
mA |
Collector Dissipation |
PC |
Mounted on a glass-epoxy board (20×30×1.6mm) |
250 |
mW |
Junction Temperature |
Tj |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C
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Parameter |
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Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector Cutoff Current |
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ICBO |
VCB=(–)20V, IE=0 |
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(–)0.1 |
µA |
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Emitter Cutoff Current |
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IEBO |
VEB=(–)3V, IC=0 |
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(–)0.1 |
µA |
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DC Current Gain |
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hFE |
VCE=(–)2V, IC=(–)100mA |
135* |
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400* |
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* : The 2SA1973/2SC5310 are classified by 100mA hFE as follows : |
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Continued on next page. |
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Rank |
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5 |
6 |
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hFE |
135 |
to 270 |
200 to 400 |
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Marking : 2SA1973 : NS
2SC5310 : NN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-1556 No.5613–1/4
2SA1973/2SC5310
Continued on preceding page.
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Gain-Bandwidth Product |
fT |
VCE=(–)10V, IC=(–)50mA |
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150 |
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MHz |
Output Capacitance |
Cob |
VCB=(–)10V, f=1MHz |
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(32)19 |
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pF |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)500mA, IB=(–)25mA |
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(–150) |
(–300) |
mV |
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100 |
200 |
mV |
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Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)500mA, IB=(–)25mA |
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(–)0.85 |
(–)1.2 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)30 |
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V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)25 |
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V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)6 |
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V |
Turn-ON Time |
ton |
See specified Test Circuit |
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(60)60 |
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ns |
Storage Time |
tstg |
See specified Test Circuit |
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(350) |
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ns |
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500 |
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ns |
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Fall Time |
tf |
See specified Test Circuit |
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(25)25 |
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ns |
Switching Time Test Circuit
PW=20µs |
IB1 |
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D.C.≤ 1% |
IB2 |
OUTPUT |
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INPUT |
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1kΩ |
RL |
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VR |
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50Ω |
+ |
+ |
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100µF |
470µF |
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VBE=--5V |
VCC=12V |
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20IB1= --20IB2= IC=500mA |
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(For PNP, the polarity is reversed.) |
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--1.0 |
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A |
--0.8 |
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– |
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C |
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I |
--0.6 |
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Current, |
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Collector |
--0.4 |
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--0.2 |
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0 |
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0 |
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--1000 |
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mA |
--800 |
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– |
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C |
--600 |
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I |
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Current, |
--400 |
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Collector |
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--200 |
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0 |
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0 |
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IC -- VCE
2SA1973
Pulse
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--6mA |
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--4mA |
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--2mA |
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I =0 |
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B |
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--0.4 |
--0.8 |
--1.2 |
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--1.6 |
--2.0 |
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Collector-to-Emitter Voltage, VCE |
– V ITR08234 |
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IC -- VBE |
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2SA1973 |
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VCE=--2V |
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Pulse |
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C |
C |
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° |
C |
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° |
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Ta=75 |
° |
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25 |
25 |
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-- |
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--0.2 |
--0.4 |
--0.6 |
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--0.8 |
--1.0 |
--1.2 |
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Base-to-Emitter Voltage, VBE |
– V ITR08236 |
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1.0 |
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A |
0.8 |
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– |
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C |
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I |
0.6 |
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Current, |
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Collector |
0.4 |
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0.2 |
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0 |
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0 |
1000
mA |
800 |
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– |
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C |
600 |
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I |
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Current, |
400 |
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Collector |
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200 |
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0 |
0
IC -- VCE
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2SC5310 |
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Pulse |
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6mA |
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4mA |
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2mA |
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I |
=0 |
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B |
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0.4 |
0.8 |
1.2 |
1.6 |
2.0 |
Collector-to-Emitter Voltage, VCE – V ITR08235
IC -- VBE
2SC5310
VCE=2V Pulse
C |
C |
C |
° |
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Ta=75 |
° |
° |
25 |
25 |
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-- |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
Base-to-Emitter Voltage, VBE |
– V |
ITR08237 |
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No.5613–2/4
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