Sanyo 2SA1968LS Specifications

Ordering number : ENN5183B

2SA1968LS

PNP Triple Diffused Planar Silicon Transistor

2SA1968LS

High-Voltage Amplifier,

High-Voltage Switching Applications

Features

Package Dimensions

•High breakdown voltage(VCEO min=--900V).

•Small Cob(Cob typ=2.2pF).

•High reliability(Adoption of HVP process).

•Package of full isolation type.

Specifications

Absolute Maximum Ratings at Ta=25°C

unit : mm

2079D

16.1

3.6

[2SA1968LS]

10.0	3.2	4.5
		2.8
3.5	7.2
		16.0

	0.6
0.9 1.2	1.2

	0.75	14.0
		0.7
1 2	3	1	: Base
	2.4	2	: Collector
		3	: Emitter
2.55	2.55	SANYO : TO-220FI(LS)

Parameter	Symbol			Conditions			Ratings			Unit
Collector-to-Base Voltage	VCBO								--900	V
Collector-to-Emitter Voltage	VCEO								--900	V
Emitter-to-Base Voltage	VEBO								--7	V
Collector Current		IC							--10	mA
Collector Current (Pulse)		ICP							--30	mA
Collector Dissipation		PC							2	W
Junction Temperature		Tj							150	°C
Storage Temperature		Tstg					--55 to +150			°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol			Conditions			Ratings			Unit
					min		typ		max
Collector Cutoff Current	ICBO		VCB=--900V, IE=0						--1	μA
Emitter Cutoff Current	I	EBO	V	=--5V, I =0					--1	μA
			EB	C

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1501 TS IM / 91098 HA (KT) / 92095 YK (KOTO) TA-0439 No.5183-1/3

2SA1968LS

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
DC Current Gain	hFE	VCE=--5V, IC=--1mA	20		50
Gain-Bandwidth Product	fT	VCE=--10V, IC=--1mA		6		MHz
Output Capacitance	Cob	VCB=--100V, f=1MHz		2.2		pF
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=--500μA, IB=--100μA			--1	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=--500μA, IB=--100μA			--1.5	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=--100μA, IE=0	--900			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=--1mA, RBE=∞	--900			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=--100μA, IC=0	--7			V
Transient Thermal Resistance	Rth(j-c)	junction-case			8.3	˚C / W

	--1.0			A		IC -- VCE
									--35 A
						A
			45						--30 A
		--				40
	--0.8				--
mA--			50
			A						--25 A
C		--							--20 A
	--0.6
I
Current,	--0.4								--15 A
Collector
									--10 A
	--0.2									--5 A
										I	=0
	0										B
		0			--2	--4		--6	--8		--10
					Collector-to-Emitter Voltage, VCE				-- V	IT03904
	--10					IC -- VBE(ON)
									VCE= --5V
	--9
mA	--8
	--7
--
C	--6
I
Current,	--5					C	C	C
						°	°	°
	--4					Ta=120	25	40
Collector								--
	--3
	--2
	--1
	0	0			--0.2	--0.4 --0.6		--0.8 --1.0	--1.2		--1.4
					Base-to-Emitter ON Voltage, VBE(ON) -- V					IT03906
	2					VCE(sat) -- IC
									IC / IB=5

Saturation Voltage, VCE(sat) -- V

Collector-to-Emitter

--10 7 5

3

2

--1.0 7 5

3

2

--0.1

	° C
Ta=120	25	°	C		40	°	C
				--

7 --0.1	2 3	5 7 --1.0	2 3	5 7 --10	2 3
		Collector Current, IC		-- mA	IT03908

Collector Current, IC -- mA

--10

--8

--6

--4

--2

IC -- VCE

.6mA			.4mA
1		1
--	--
.8mA
1
--

--	2	. 0mA

	.2mA		.0mA
1
--		1
		--
		800			A
		--
		600			A
		--
		400			A
		--
				A
		--200
				A
		--150
		--100 A
		--50 A

	0											I	B	=0
	0		--2			--4		--6			--8			--10
			Collector-to-Emitter Voltage, VCE								-- V		IT03905
	100					hFE --		IC
											VCE= --5V
	7
	5		Ta=120°C
FE	3			25°C
h
Gain,	2		--40°C
Current
	10
DC	7
	5
	3
	2
	7	--0.1	2	3	5	7	--1.0	2	3	5	7	--10			2
				Collector Current, IC					--	mA			IT03907
	3				VBE(sat)			--	IC
											IC / IB=5
V	2
--
(sat)	--1.0				Ta=		--40°C
BE
V	7						25°C
Emitter-to-Base Voltage,Saturation
	5						°C
							120
	3
	2
	--0.1
	7	--0.1	2	3	5	7	--1.0	2	3	5	7	--10			2
				Collector Current, IC					--	mA			IT03909

No.5183-2/3