Sanyo 2SA1968LS Specifications
Ordering number : ENN5183B
2SA1968LS
PNP Triple Diffused Planar Silicon Transistor
2SA1968LS
High-V oltage Amplifier ,
High-Voltage Switching Applications
Features
•
High breakdown voltage(V
•
Small Cob(Cob typ=2.2pF).
• High reliability(Adoption of HVP process).
• Package of full isolation type.
min=--900V).
CEO
Specifications
Package Dimensions
unit : mm
2079D
[2SA1968LS]
10.0
16.1
3.6
123
2.55
0.9
0.75
1.2
2.55
3.2
3.5
7.2
16.0
14.0
2.4
4.5
2.8
0.6
1.2
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
--900 V
--900 V
--7 V
--10 mA
--30 mA
2W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
CBO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=--900V, IE=0 --1 µA
VEB=--5V, IC=0 --1 µA
Continued on next page.
N1501 TS IM / 91098 HA (KT) / 92095 YK (KOTO) TA-0439
Unit
No.5183-1/3
2SA1968LS
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=--100V, f=1MHz 2.2 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--500µA, IB=--100µA --1 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=--500µA, IB=--100µA --1.5 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Transient Thermal Resistance Rth(j-c) junction-case 8.3 ˚C / W
FE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
VCE=--5V, IC=--1mA 20 50
VCE=--10V, IC=--1mA 6 MHz
T
=--100µA, IE=0 --900 V
=--1mA, RBE=∞ --900 V
=--100µA, IC=0 --7 V
Ratings
min typ max
Unit
--1.0
--45µA
--0.8
mA
--
--50µA
C
--0.6
--0.4
Collector Current, I
--0.2
0
0
--2 --4 --6 --8 --10
IC -- V
--40µA
Collector-to-Emitter Voltage, V
--10
--9
--8
mA
--7
-C
--6
--5
--4
--3
Collector Current, I
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.4--1.2
IC -- VBE(ON)
°C
25
Ta=120°C
Base-to-Emitter ON Voltage, VBE(ON) -- V
2
--10
7
5
(sat) -- V
3
CE
2
--1.0
7
5
3
Collector-to-Emitter
Saturation V oltage, V
2
VCE(sat) -- I
CE
°C
--40
Ta=120°C
C
CE --
°C
25
V
VCE= --5V
IC / IB=5
°C
--40
--35µA
--30µA
--25µA
--20µA
--15µA
--10µA
--5µA
=0
I
B
IT03904
IT03906
--10
--8
mA
-C
--6
--2.0mA
--4
Collector Current, I
--2
0
0
100
7
5
3
FE
2
10
7
DC Current Gain, h
5
3
2
--0.1
3
2
--1.0
(sat) -- V
BE
7
5
3
2
Base-to-Emitter
Saturation V oltage, V
--1.6mA
IC -- V
--1.4mA
CE
--1.2mA
--1.8mA
--2 --4 --6 --8 --10
Collector-to-Emitter Voltage, V
h
-- I
FE
CE --
C
VCE= --5V
Ta=120
°C
°C
25
°C
--40
23 775
Collector Current, I
VBE(sat) -- I
--1.0
22375
mA
C --
C
I
°C
--40
Ta=
°C
25
120°C
--1.0mA
--800µA
--600µA
--400µA
--200µA
--150µA
--100µA
--50µA
=0
I
B
IT03905
V
--10
IT03907
C / IB
=5
--0.1
--0.1
23 75
7
Collector Current, I
--1.0
23 2375
mA
C --
--10
IT03908
--0.1
72
--0.1
23 75
Collector Current, I
--1.0
23 75
mA
C --
--10
IT03909
No.5183-2/3
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