Page 1
Ordering number : ENN5183B
2SA1968LS
PNP Triple Diffused Planar Silicon Transistor
2SA1968LS
High-V oltage Amplifier ,
High-Voltage Switching Applications
Features
•
High breakdown voltage(V
•
Small Cob(Cob typ=2.2pF).
• High reliability(Adoption of HVP process).
• Package of full isolation type.
min=--900V).
CEO
Specifications
Package Dimensions
unit : mm
2079D
[2SA1968LS]
10.0
16.1
3.6
123
2.55
0.9
0.75
1.2
2.55
3.2
3.5
7.2
16.0
14.0
2.4
4.5
2.8
0.6
1.2
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
C
--900 V
--900 V
--7 V
--10 mA
--30 mA
2W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
CBO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=--900V, IE=0 --1 µA
VEB=--5V, IC=0 --1 µA
Continued on next page.
N1501 TS IM / 91098 HA (KT) / 92095 YK (KOTO) TA-0439
Unit
No.5183-1/3
Page 2
2SA1968LS
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=--100V, f=1MHz 2.2 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--500µA, IB=--100µA --1 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=--500µA, IB=--100µA --1.5 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Transient Thermal Resistance Rth(j-c) junction-case 8.3 ˚C / W
FE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
VCE=--5V, IC=--1mA 20 50
VCE=--10V, IC=--1mA 6 MHz
T
=--100µA, IE=0 --900 V
=--1mA, RBE=∞ --900 V
=--100µA, IC=0 --7 V
Ratings
min typ max
Unit
--1.0
--45µA
--0.8
mA
--
--50µA
C
--0.6
--0.4
Collector Current, I
--0.2
0
0
--2 --4 --6 --8 --10
IC -- V
--40µA
Collector-to-Emitter Voltage, V
--10
--9
--8
mA
--7
-C
--6
--5
--4
--3
Collector Current, I
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.4--1.2
IC -- VBE(ON)
°C
25
Ta=120°C
Base-to-Emitter ON Voltage, VBE(ON) -- V
2
--10
7
5
(sat) -- V
3
CE
2
--1.0
7
5
3
Collector-to-Emitter
Saturation V oltage, V
2
VCE(sat) -- I
CE
°C
--40
Ta=120°C
C
CE --
°C
25
V
VCE= --5V
IC / IB=5
°C
--40
--35µA
--30µA
--25µA
--20µA
--15µA
--10µA
--5µA
=0
I
B
IT03904
IT03906
--10
--8
mA
-C
--6
--2.0mA
--4
Collector Current, I
--2
0
0
100
7
5
3
FE
2
10
7
DC Current Gain, h
5
3
2
--0.1
3
2
--1.0
(sat) -- V
BE
7
5
3
2
Base-to-Emitter
Saturation V oltage, V
--1.6mA
IC -- V
--1.4mA
CE
--1.2mA
--1.8mA
--2 --4 --6 --8 --10
Collector-to-Emitter Voltage, V
h
-- I
FE
CE --
C
VCE= --5V
Ta=120
°C
°C
25
°C
--40
23 775
Collector Current, I
VBE(sat) -- I
--1.0
22375
mA
C --
C
I
°C
--40
Ta=
°C
25
120°C
--1.0mA
--800µA
--600µA
--400µA
--200µA
--150µA
--100µA
--50µA
=0
I
B
IT03905
V
--10
IT03907
C / IB
=5
--0.1
--0.1
23 75
7
Collector Current, I
--1.0
23 2375
mA
C --
--10
IT03908
--0.1
72
--0.1
23 75
Collector Current, I
--1.0
23 75
mA
C --
--10
IT03909
No.5183-2/3
Page 3
--10
-- MHz
T
2SA1968LS
f
-- I
T
2
7
5
3
2
C
VCE= --10V
5
3
2
10
7
5
3
2
Cob -- V
CB
f=1MHz
--1.0
7
5
Gain-Bandwidth Product, f
3
--0.1 --1.0
23 775
Collector Current, IC -- mA
5
ICP= --30mA
3
2
-- mA
IC= --10mA
C
--10
7
5
3
Collector Current, I
2
Forward Bias A S O
DC operation
Ta=25°C
Single pulse
--1.0
--100
Collector-to-Emitter Voltage, VCE -- V
1.0
7
Output Capacitance, Cob -- pF
5
3
23 75
IT03910
--10
2
--1.0
2.4
2375
7
--10
23 5
7
--100
Collector-to-Base Voltage, VCB -- V
PC -- Ta
2235
7
--1000
IT03911
≤100µs
2.0
-- W
C
1.6
10ms
500µs
1ms
No heat sink
1.2
0.8
Collector Dissipation, P
0.4
2235757
--1000
IT03912
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03913
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of Novermber, 2001. Specifications and information herein are subject
to change without notice.
No.5183-3/3
PS
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